以微波法成長氧化銦鎵鋅薄膜之特性分析

Characteristics of growth of Indium-Gallium-Zinc-Oxide thin films by microwave

柏有駿(You-Jum Bo)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電工程系光電與材料科技碩士班/碩士(2016年)

摘要

本研究將以微波方式成長氧化銦鎵鋅薄膜，因為微波法具有(a)均勻快速加熱、(b) 縮短反應時間、(c)產物純度高之特點。塗佈液為醋酸鋅、三氯化鎵、氯化銦之適當比例的混合水溶液。接著將塗佈液均勻塗佈於玻璃基板上，最後再以微波爐加熱形成氧化銦鎵鋅薄膜。
本研究主要以不同的醋酸鋅水溶液濃度、三氯化鎵水溶液濃度和氯化銦水溶液濃度等 參數成長氧化銦鎵鋅薄膜。先以薄膜穿透率量測分析薄膜光特性；再以霍爾量測了解薄膜 之電特性；最後透過 X 射線繞射分析儀分析薄膜。我們發現成長最佳化氧化銦鎵鋅薄膜之 最佳濃度分別為：醋酸鋅濃度為 0.03M、氯化銦濃度為 0.01M、三氯化鎵濃度為0.03M。最 佳化氧化銦鎵鋅薄膜之平均穿透率為 80%、電阻值最低為36.741 Ω-cm，將來可作為透明薄膜電晶體。

關鍵字

微波爐 ； 氧化銦鎵鋅 ； 薄膜電晶體

並列摘要

This study will be a microwave method to grow indium gallium zinc oxide film, because the microwave method has (a) a uniform rapid heating, (b) to shorten the reaction time, the characteristic (c) the product of high purity. Zinc acetate coating solution, a mixed aqueous solution an appropriate proportion of gallium trichloride, indium trichloride. Next, the coating liquid is uniformly coated on a glass substrate, and finally to the microwave Indium-Gallium –Zinc-Oxide film is formed.
This study with different concentrations of zinc acetate aqueous solution, the concentration and the concentration of the gallium trichloride, indium trichloride aqueous solution parameters such as indium gallium zinc oxide film growth. In the first film transmittance measurement analysis film optical properties; Hall and then to measure the electrical properties of the films of the understanding; the last film by X-ray diffraction analysis analyzer. We found that the best concentration to optimize growth indium gallium zinc oxide thin film were: zinc acetate concentration was 0.03M, the concentration of indium chloride to 0.01M, the concentration of gallium trichloride 0.03M. The average penetration Optimizer indium gallium zinc oxide thin film was 80%, the resistance value of the minimum 36.741 Ω-cm, in the future as the transparent thin film transistor.

並列關鍵字

Microwave ； Indium-Gallium-Zinc-Oxide ； thin film transistor

參考文獻

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