高導電率高穿透率銅奈米顆粒散佈氧化鋅薄膜之研製

Study on High Conductive and Transparent Copper on Zinc Oxide Thin Film

伍家顯(Chia-Hsien Wu)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2015年)

https://doi.org/10.6827/NFU.2015.00029

摘要

本篇論文中，使用雙電漿輔助有機金屬化學氣相沉積(DPEMOCVD)設備在低溫下成長的氧化鋅(ZnO)薄膜，其平均透光率為87％，電阻率為6.94 Ωcm。再以超音波粉體分散，散佈銅奈米顆粒於氧化鋅薄膜上。分析不同重量百分比銅粉、聚乙烯?咯烷酮(PVP)濃度、不同退火溫度、不同退火時間，對氧化鋅薄膜特性之影響。銅粉最佳百分比為0.25wt%在退火時間為三分鐘與溫度500℃，銅奈米顆粒散佈於氧化鋅之電阻率為5.26×10-3 Ωcm，平均穿透率82%，薄膜優點係數為7.052×10-4Ω-1，在XRD分析中所成長的銅奈米顆粒散佈氧化鋅薄膜中擁有氧化鋅(002)峰值與銅(111)峰值。使用聚乙烯?咯烷酮(PVP)高分子分散劑可使銅奈米顆粒不易團聚，最佳PVP濃度為1×10-5M，在退火時間為三分鐘與溫度500℃時，可使電阻率達到2.13×10-3 Ωcm，且穿透率為80.4%，薄膜優點係數為1.026×10-3Ω-1。

關鍵字

雙電漿 ； 有機金屬化學氣相沉積法 ； 超音波分散

並列摘要

In thesis of this page, using a dual plasma enhanced metal organic chemical vapor deposition (DPEMOCVD) Whom apparatus grow up under low temperature Zinc Oxide (ZnO) thin film, its average printing opacity rate is 87%, the resistivity is 6.94Ωcm. And then disperse with the body of ultrasonic powder, spread Copper and endure the rice particle in ZnO thin film. Analyze different the intersection of weight and the intersection of percentage and the intersection of Copper and powder, Polyvinylpyrrolidone (PVP) Thickness, different annealed temperature, different annealed time, to the influence ZnO thin film characteristic. Copper powder best percentage 0.25wt% three minute and the intersection of temperature and 500℃ in annealed time, it is 5.26×10-3 Ωcm that Copper endures the rice particle and scatters in the resistivity of ZnO, penetrating rate is 82% on average, Figure of meri is 7.05×10-4 Ω-1, Copper not grown up endure the intersection of rice and particle spread, ZnO (002) in the membrane until XRD analyze Peak value and Copper (111) Peak value. Use Polyvinylpyrrolidone (PVP) Macromolecule dispersant can make Copper endure the difficult reunion of rice particle, the best PVP thickness is 1×10-5M, until annealed time three minute and the intersection of temperature and 500℃, can make the resistivity reach 2.1×10-3Ωcm, and it is 80.4% to penetrate leading, Figure of meri is 1.026×10-3Ω-1.

並列關鍵字

DPEMOCVD ； Ultrasonic dispersion ； Cu/ZnO

參考文獻

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