應用於高效率單晶矽太陽能電池之網印銀電極及濺鍍摻鋁氧化鋅電極特性研究

改善太陽能電池元件特性，最主要的三大重點為(1)降低表面復合(2)提高並聯電阻(降低製造缺陷及設計多能隙材料)(3)降低接觸電阻。為了達成這些目標，本論文藉由改變不同的燒結時間及溫度等條件，改善網印銀電極接觸特性。透過電性及材料分析的量測，了解各種製程條件對太陽能電池元件的特性影響，包含銀膠能均勻滲透SixNy並與射極接觸。銀膠滲透SixNy能與射極達到最大接觸面積比及得到最佳銀膠加熱參數。實驗結果指出藉由燒結時通入放流氮氣可使得正面網印之銀表面顆粒減少，增加元件轉換效率。其結果為正面燒結條件在855℃持溫140秒進行退火處理，背面則使用金屬濺鍍機沉積鋁後再至爐管燒結400℃持溫25分鐘，可獲得最佳條件，其轉換效率達5.58 %，開路電壓Voc =529mV，短路電流密度Isc =26.8 mA/cm2，填充因子FF=39.3 %。為探討透明導電薄膜摻鋁氧化鋅(AZO)的特性。首先使用射頻濺鍍磁控沉積AZO，使薄膜具有高穿透率( > 90%)與低電阻率(1.36×10-3歐姆公分)。接著使用45%氫氧化鉀(KOH)濕式蝕刻摻鋁氧化鋅(AZO)，所調變的參數為蝕刻的溫度及時間，除了具有良好的穿透率與導電性之外，蝕刻完後的表面形貌將能增加其照光面積並增加抗反射的效果。最後將此AZO導入單晶矽太陽能電池。

關鍵字

網印銀膠；燒結條件；摻鋁氧化鋅；氫氧化鉀濕式蝕刻

並列摘要

The continuous improving solar cell devices performances are needed for low surface recombination, high shunt resistance, and low series resistance. To achieve this goal, the high quality silver paste was investigated to reduce the series resistance between Ag and the Si interfaces. By modulated the various post annealing temperature and time, the high quality silver contacts can be achieved for the silicon solar cell (SSC) devices applications. According to the electrical measurement and material analysis, the effects of the silver electrode on the characterizations of the SSC devices were addressed. There are some major works to be carried out in this thesis, (1) The silver paste can run through the silicon nitrides. (2) The effective contact areas of Ag/Si system can be increased. (3) The optimum post annealing conditions for the silver electrode can be obtained. The results indicate that the bubble generated on the printed silver surface can be reduced by the overflow of nitrogen during post screen print annealing. Thus, the conversion efficiency of solar cells can be improved by combined post screen printed annealing at 855℃ for 140 s with post-backside Al annealing at 400℃ for 25 min. The conversion efficiency of 5.58%, open-circuit voltage of 529 mV, short-circuit-current density of 26.8 mA/cm2, and fill factor of 39.3% can be obtained. In order to understand the characteristics of Al-doped zinc oxide (AZO), various AZO films were deposited on glass substrates by RF sputter. The results indicate that the AZO film with high transmission of 90% above and low resistivity of around 1.36×10-3 Ωcm was demonstrated. Next, the AZO nanorods were obtained by using AZO film etched in the KOH wet solution (45%). Finally, the characteristic of the solar cell with AZO film as antireflective coating was demonstrated.

並列關鍵字

screen printed silver ； annealing ； aluminum-doped zinc oxide ； KOH wet etching technique

參考文獻

[1] T. Sun, J. Miao, R. Lin, Y. Fu., “The effect of baking conditions on the effective contact areas of screen-printed silver layer on silicon substrate”, Solar Energy Materials & Solar Cells 85 (2005) pp. 73–83.

[2] J. Szlufcik, F. Duerinckx, J. Horzel, E. V. Kerschaver, H. Dekkers, S. De Wolf, P. Choulat, C. Allebe, J. Nijs. “High-efficiency low-cost integral screen-printing multicrystalline silicon solar cells”, Solar Energy Materials & Solar Cells 74 (2002) pp. 155–163.

[3] A. Ebong, J. Brody, A. Rohatgi, T. Williams,“ Optimization of front metal contact ring scheme to achieve high factors on screen printed silicon solar cells ”,Solar Energy Materials & Solar Cells 65 (2001) pp. 613–619.

[4] L. M. Portera, A. Teichera, D. L. Meierb, “Phosphorus-doped, silver-based pastes for self-doping ohmic contacts for crystalline silicon solar cells,” Solar Energy Materials & Solar Cells 73 (2002) pp. 209–219.

[5] C. H. Lin, S. Y. Tsai, S. P. Hsu, M. H. Hsieh, “Investigation of printed Ag contacts on crystalline Si solar cells,” Energy Materials & Solar Cells 92 (2008) pp. 1011–1015.

國際替代計量

應用於高效率單晶矽太陽能電池之網印銀電極及濺鍍摻鋁氧化鋅電極特性研究

未授權

主題瀏覽