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  • 學位論文

發光二極體銲線製程之研究

Study of Wire Bonding Process for LED

指導教授 : 陳文瑞
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摘要


本研究中,我們優化460 nm 藍光發光二極體晶粒銲線製程,藉由優化金線線徑與打線線弧,能讓外界溫度改變時繼續使LED元件正常操作並提升樣品可靠度,此外我們分析失效樣品並找出其失效原因。透過溫度循環測試 (TCT) ,我們發現改變金線線徑由1.0 mil至1.2 mil及金線線弧由normal loop變更為Q loop均可提升LED銲線可靠度;另一方面我們同時使用1.2 mil金線線徑和Q loop打線線弧,發現可提升LED靠度,但沒有明顯加乘效果。最後使用M loop金線線弧可適用於各種不同尺寸LED晶粒,並可通過應用端客戶TCT 700次循環無死燈測試。

並列摘要


In this study, we optimize the wire bonding process for 460 nm blue light emitting diodes (LEDs) chip. The LEDs can operate and enhance the reliability when the environment temperature changes by optimizing the wire diameter and wire camber. In addition, we can analyze the fail reason by fail samples. From the thermal cycle test (TCT), changing the wire diameter (from 1.0 mil to 1.2 mil) and the wire camber (from the normal loop to Q loop) which it can enhance the LEDs reliability, individually. On the other hand, it can enhance the LEDs reliability but it is no synergistic effect obviously using the 1.2 mil wire diameter and the Q loop wire camber at the wire bonding process. Finally, it can use different LEDs chip size and pass the 700 cycles thermal cycle test using the M loop wire camber.

參考文獻


[1] E. F. Schubert, Light Emitting Diodes, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2003, pp. 21–22.
[2] S. Nakamura, “InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate,” Appl. Phys. Lett., vol. 72, no. 2, pp. 211–213, 1998.
[4] S. Nakamura, “InGaN/GaN/AlGaN-based laser diodes with modulation doped
strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate,”
Appl. Phys. Lett., vol. 72, no. 2, pp. 211–213, 1998.

被引用紀錄


張凱翔(2013)。居住環境與醫療利用的相關性〔碩士論文,國立臺北大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0023-2406201315311100

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