矽奈米柱/單晶矽基異質接面太陽能電池之研製

本論文利用氣液固法(Vapor-Liquid-Solid)搭配金催化劑成長矽奈米柱(silicon nanorods, SNRs)於單晶矽基板上，藉由改變不同的SiH4及N2沈積流量、成長時間及溫度等條件，成長高品質矽奈米柱並應用於太陽能電池元件之射極層及抗反射層。其中搭配SiOx抗反射層改善矽奈米柱/單晶矽基異質接面太陽能電池之轉換效率、開路電壓、短路電流及填充因子等特性，經由多種參數調配量測結果，於通入SiH4:N2=25:100 (sccm)，成長60分鐘所得到之效率值為最高，電池結構為Al/N+-SiNRs/I-type SiNRs/I-type poly-Si/P-type Si其效率為1.9%。另外為增加P-N接面面積，採用硝酸銀混合濕式蝕刻液獲得矽奈米線(Silicon nanowires , SNWs)，並應用於太陽能電池之吸收層，藉由P-N接面面積的增加，改善矽奈米線太陽能電池特性。藉由改變不同的蝕刻深度、擴散時間及溫度，發現於蝕刻深度660 nm、擴散時間3 hr及擴散溫度950 oC之情況下可得到效率為最高，其電池結構為Al/N+-SNWs/P-type SNWs/P-type Si，其效率為4.41%，並在沈積SiNx抗反射層後更提升到5.5%。

關鍵字

氣液固相法；奈米材料；硝酸銀蝕刻；太陽能電池

並列摘要

In this thesis, the vapor-liquid-solid technique was adopted to develop the silicon nanorods (SNRs) as the emitter and the absorber layer of solar cells. By modulated the various ambient flow, growth temperature and time, the SNRs can be achieved for the silicon heterojunction solar cell devices applications. The enhanced properties of solar cells with SiNx as anti-reflection coating (ARC), including conversion efficiency, open-circuit voltage, short-circuit current, and fill factor, were demonstrated. According to the optimization of these process conditions, the efficiency of the Al/N+-SNRs/I-type SNRs/I-type poly-Si/ P-type Si structured thin-film solar cells with SiH4:N2=25:100 (sccm) and deposition time of 60 min, can be achieved around 1.9%. To increase the area of the p-type Si/n-type Si junction, the SNWs were obtained using the mixed AgNO3/HF solution wet etching method. By modulated the etching depth, diffusion time and temperature, the conversion efficiency (CE) of the Al/N+-SNWs/I-type SNWs/I-type poly-Si/P-type Si structured solar cell can be achieved around 4.41%. The process conditions include etching depth of 660nm, diffusion time of 3hr, and diffusion temperature of 950oC. Furthermore, the CE of the Al/N+-SNWs/I-type SNWs/I-type poly-Si/P-type Si structured solar cell with SiNx as ARC can be increased to 5.5%.