以非真空製程製備銅銦鎵硒(CuInGaSe2)薄膜光伏材料及其特性研究

Preparation and Characterization of CuInGaSe2 Photovoltaic Thin Films by Non-vacuum Processes

吳明峰(Ming-Feng Wu)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所在職專班/碩士(2012年)

https://doi.org/10.6827/NFU.2012.00040

摘要

銅銦鎵硒(Cu(InGa)Se2，CIGS)在薄膜太陽能電池的發展中佔有極重要的地位，在此論文中，學生使用非真空製程，將銅、銦、鎵、硒四種元素的靶材，依不同的比例熔煉成Cu-rich、Stoichiometric及Cu-poor三種CuInGaSe2的合金元素，再藉由球磨法製備成CuInGaSe2漿料，並以旋轉塗佈法將CuInGaSe2漿料均勻塗佈在矽基材及玻璃基材上形成前驅層，再把CuInGaSe2前驅層置於RTA爐管內進行快速退火製程，目的是在於能將CuInGaSe2前驅層不經由通入硒蒸氣或者硒化氫的情況下能有液相燒結的情況產生。接著將快速退火後的CuInGaSe2前驅層進行EDS觀察成分的變化、SEM觀察表面及橫截面的形貌變化、及XRD觀察成分結構之變化。由本實驗結果得知CuInGaSe2之前驅層經熔煉成四元合金元素後會具有不同的組織結構，且塗佈完成的試片經熱處理快速退火後會使晶粒有較大顯著的改變

關鍵字

光伏元件 ； 太陽電池 ； 銅鎵鎵硒 ； 熔煉 ； 前驅層 ； 黃銅礦

並列摘要

Cu (In, Ga) Se2 (CIGS) plays a very important role in the development of thin film solar cells. In this thesis, According to different proportions, we present a study on copper, indium, gallium, selenium to smelting Cu-rich
,Stoichiometric and Cu-poor of two alloying elements of CuInGaSe2 by non-vacuum process. The CuInGaSe2 slurry was prepared using ball milling. And the CuInGaSe2 slurry was printed onto a silicon substrate and glass substrate to form a precursor layer by spin coating, then rapid thermal annealing process within the RTA furnace.
The purpose is to be able to obtain CuInGaSe2 precursor layer liquid phase sintering without toxic Se or H2Se atmosphere. Then observation elemental composition was characterized by using EDS, surface morphology and cross-section determined by SEM, and observation composition of the changes by X-ray diffraction (XRD).
The results of this experiment indicated that the precursor layer was been quaternary alloying elements after smelting to form the different structure and complete coating specimens after rapid thermal annealing cause grain structure has a greater a significantly change.

並列關鍵字

Photovoltaic ； Solar cell ； Cu(InGa)Se2 ； Smelting ； Precursor layer ； Chalcopyrite

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