以相位移陰影雲紋法與有限元素分析探討IGBT功率模組受熱負載之力學行為

Investigation on the Mechanical Behavior of IGBT Power Module Subjected to Thermal Loading Using Phase-stepping Shadow Moire and Finite Element Analysis

楊振偉(Chen-Wei Yang)

指導教授 ： 徐烱勛

國立虎尾科技大學/工程學院/機械與機電工程研究所/碩士(2014年)

摘要

近年來隨著半導體製程的改善，功率半導體擁有低轉換損耗及低傳導損耗的特性，且IGBT功率半導體元件具有高輸入阻抗、低驅動功率等特性，使得IGBT功率半導體元件被廣泛應用於功率模組中，其中以應用在電動車、動力混合汽車最為顯著，也讓車用IGBT功率模組成為現階段綠能節能產業中最重要的關鍵。當IGBT功率模組進行製程時，會有可靠度的問題發生，而影響可靠度的主要原因之一來自熱，當功率模組承受溫度負載時，會使它產生翹曲現象，而產生的原因主要是因為IGBT功率模組材料之間的熱膨脹係數不匹配所造成。
本文對功率模組因熱膨脹係數產生翹曲現象，先將功率模組銅基板做預彎翹曲的工作，利用光學量測技術之相位移陰影雲紋法(Phase-stepping shadow moire)，量測出功率模組銅基板的位移量，再以有限元素分析來進行模擬比對，比對功率模組的銅基板、銅基板與DBC模組、銅基板與DBC模組和IGBT功率半導體經由製程時的溫度負載導致的翹曲變形。

關鍵字

絕緣柵雙極性電晶體 ； 功率模組 ； 翹曲 ； 相位移法 ； 陰影雲紋法 ； 有限元素分析 ； 直接銅接合

並列摘要

In recent years, along with the improvement on manufacturing of semiconductor, the insulate gate bipolar transistors (IGBT) power transistors become to have high input impedance, low driving voltage, etc., and this makes they have been widely used in power modules especially for the application in electric vehicles and hybrid electric vehicles. This is why that IGBT power modules play a key role in green-related energy saving industry. However, there are some crucial reliability problems of IGBT power transistors arising in the manufacturing processes. Thermally-induced warpage coming from the thermal mismatch of coefficient of thermal expansion (CTE) between the each laminates of IGBT power transistors have been treated as one of the most important problems.
This thesis aims to investigate the mechanical behavior of IGBT power module subjected to thermal loading. First, a cooper substrate was pre-bended and a phase-stepping shadow moire (PSSM) was established to measure its full-field warpge. Then finite element analysis (FEA) was utilized to simulate the deformation resulting from thermal loading. Three specimens including bare cooper substrate, direct bond copper (DBC) module mounted on cooper substrate, DBC module and IGBT power module mounted on cooper substrate were respectively carried out to experimentally and numerically investigate their thermal behavior.

並列關鍵字

insulate gate bipolar transistors ； power module ； warpage ； phase-stepping ； shadow moire ； finite element analysis ； direct bond copper

參考文獻

[3] V. K. Khanna, The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design, IEEE Press, New Jersey, 2003.

[8] 劉君愷，趙玉麟，高國書，范榮昌，張景堯，張榮謙，曾志銘，“車用IGBT功率模組封裝技術”，工業技術研究院電子與光電研究所，24卷，86-92頁，2013年。

[10] J. He, V. Mehrotra, M. C. Shaw,“Thermal design and measurements of igbt power modules: transient and steady state”, Microelectronics Reliability, Vol.39, pp1440-1444, 1999.

[11] N.Y.A. Shammas, “Present problems of power module packaging technology”, Microelectronics Reliability, Vol.43, pp519-527, 2003.

[12] T. Y. Hung, S. Y. Chiang, C. Y. Chou, C. C. Chiu, and K. N. Chiang, “Thermal design and transient analysis of insulated gate bipolar transistors of power module”, IEEE, 2010.