雙電漿輔助有機金屬化學氣相沉積法成長氧化鋅薄膜

Zinc Oxide Thin Films Prepared by Dual Plasma Enhanced Metal Organic Chemical Vapor Deposition System

吳祥銘(Hsiang-Ming Wu)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

摘要

本篇論文中，使用雙電漿輔助有機金屬化學氣相沉積（DPEMOCVD）的設備在低溫下成長的氧化鋅（ZnO）薄膜，其中包含一個直流電壓（DC）的電漿系統和射頻（RF）電漿系統。直流電漿系統主要功能是輔助增加解離氧氣。經實驗結果使用DPEMOCVD系統成長氧化鋅薄膜最佳的基板溫度為的是185 oC的腔體壓力為 50 mtorr，直流和射頻功率分別為 1.8 W和350 W，所成長的氧化鋅薄膜在藍寶石基板( Sapphire )上有最強的XRD（002）繞射峰值，其透光率高達87％，電阻率為6.5×10-3Ωcm。最後我們將氧化鋅薄膜應用於光電元件上，當做氮化銦鎵/氮化鎵發光二極體的透明導電層（TCL）。與使用銦錫氧化物（ITO）當氮化銦鎵/氮化鎵發光二極管的透明導電層作比較，結果顯示氮化銦鎵/氮化鎵發光二極管的不論在氧化鋅薄膜或是銦錫氧化物上皆呈現相同的光學和電學特性，表示使用DPEMOCVD系統成長出的氧化鋅薄膜的可以代替銦錫氧化物當作氮化銦鎵/氮化鎵發光二極管的透明導電層使用。
另一方面，我們也成長氧化鋅薄膜於可撓性基板-聚苯醚碸( polyestersulfone,PES）上。使用DPEMOCVD系統成長氧化鋅薄膜最佳的基板溫度為的是185 oC的腔體壓力為 50 mtorr，直流和射頻功率分別為 1.8 W，350 W，所成長的氧化鋅薄膜在聚苯醚碸上有最強的XRD（002）繞射峰值，其透光率高達84％，電阻率為2.5×10-2 Ωcm，接觸角為 96.7度。結果顯示在氧化鋅薄膜成長在聚苯醚碸上比銦錫氧化物成長在聚苯醚碸上來得好。

關鍵字

雙電漿 ； 有機金屬化學氣相沉積法 ； 氧化鋅 ； 低溫 ； 聚苯醚碸

並列摘要

In this article, we have reported on the low-temperature-grown zinc oxide (ZnO) grown by dual-plasma-enhanced metal organic chemical vapor deposition (DPEMOCVD) facility, which contains a direct voltage (DC) drove capacitor-coupled electrodes and a radio-frequency (RF) plasma system. The DC plasma system serves the function of enhancing the dissociation of oxygen gas (O2) and radio-frequency (RF) plasma system helps to maintain the dissociated free radicals in chamber. The optimum substrate temperature for ZnO thin film grown by DPEMOCVD system is 185 oC under the conditions of chamber pressure of 50 mtorr, DC and RF power of 1.8 Watt (W) and 350 W. The ZnO grown on sapphire at 185 oC represents a strongest (002) peak intensity observed in X-ray diffraction (XRD), a highest transmittance of 87 %, and lowest resistivity of 6.5×10-3 Ωcm. Finally, we apply the ZnO thin film to InGaN/GaN light-emitting diode as the transparent conductive layer (TCL). As compared to the InGaN/GaN LEDs with indium-tin-oxide (ITO) TCL, the InGaN/GaN LEDs with ZnO thin film present the same optical and electrical characteristics, indicating that the ZnO thin film grown by DPEMOCVD system can be a candidate for TCL in InGaN/GaN LEDs.
Addition, The ZnO thin flims grown on polyestersulfone (PES) at 185 oC represents a strongest (002) peak intensity observed in X-ray diffraction (XRD), a highest transmittance of 84 %, and lowest resistivity of 2.5×10-2 Ωcm,contact angle 96.7 o.the result showed the znic oxide thin films on polyestersulfone is batter than Indium tin oxide on polyestersulfone.

並列關鍵字

DPEMOCVD ； ZnO ； PES ； Sapphire ； Low Temperature

參考文獻

[4] K. Ellmer, A. Klein, “ZnO and Its Applications”, Springer Series in Materials Science Vol.104 pp.1-33(2008)

[5] Ziqiang Xu, Hong Deng, Juan Xie, Yan Li, Yanrong Li, Xiaotao Zu, Shuwen Xue, “Photoconductive UV Detectors Based on ZnO Films Prepared by Sol-Gel Method”, Journal of Sol-Gel Science and Technology Vol.36 pp.223-226(2005)

[6] Yukio Yoshino, Yoshimitsu Ushimi, Hajime Yamada, Masaki Takeuchi, “Zinc Oxide Piezoelectric Thin Films for Bulk Acoustic Wave Resonators”, Murata Manufacturing Co.

[7] Pu Xian Gao, Zhong L. Wang, “Nanoarchitectures of semiconducting and piezoelectric zinc oxide”, Journal of Applied Physics Vol.97 044304 (2005)

[8] S. V. Jaskolski, Deep Aggarwal, “Effect of Uniaxial Pressure on ZnO Acousto-Electric Devices”, IEEE Transactions on Sonics and Ultrasonics Vol.SU-I 9 pp.420-424(1972)