本論文結合矽與銅兩種材料,製作用於微型投影機光源之發光二極體光源模組。實驗採用厚度275 μm的矽基板,經過黃光微影後在55 oC下進行矽濕蝕刻深至60 μm,之後使用電子束蒸鍍系統蒸鍍晶種層,再利用電鍍技術將銅膜增厚,最後以研磨方式使表面平整光滑,藉此「銅矽」結合形成封裝用之光源模組副載具。但銅易氧化,又另外結合「金銅矽」與「金鎳銅矽」兩種副載具作比較。光源模組則是採用傳統固晶打線方法,使電熱分離避免發光二極體模組的熱堆積在基板。在電路設計部分,採取9顆或16顆發光二極體以不同串並聯方式連接,LED封裝後進行I-V量測、接面溫度量測、熱阻量測等電性特性,並分析其光譜。各副載具比較後由結果可得知,金鎳銅矽基板之副載具散熱最好,順向偏壓最低且接面溫度比矽副載具低10K,熱阻與其他副載具比較也小於0.6 oC/W以上,散熱佳光功率高,光通量約250 lm,發光效率約23 lm/W。
This study consists of the silicon and the copper materials to fabricate the LED lighting module used for the mini projector. The silicon substrate used throughout the experiment has a thickness of 275 μm. After the photolithography process, the silicon substrate was wet etched down to 60 μm at 55 oC. Then a seed layer was deposited on the sample surface by using the electron beam evaporation. The electroplating technique was performed to increase the copper thickness, and later the sample was grinding to make the surface smoother. After following the above steps, the submount used for the light source was finished. But, the copper is easily oxidized, so we also consist of the gold and nickel two different materials for comparison. Finally, we use the traditional package method, i.e. the die attached method. The generated heat can be avoided from the substrate, since the electricity and the heat flow can be separated. For the circuit design, the nine or sixteen LEDs were used in series or parallel connections. After packaging, we measured the LED I-V curve, junction temperature, and thermal resistance, then analysis of the spectra. We found that the higher efficiency was Au/Ni/Cu/Si substrate. The lower forward voltage and compared to the silicon substrate, the measured junction temperature was reduced about 10 K. The luminous efficiency was 23 lm/W.