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  • 學位論文

Ⅰ.一針對經過泛用系統單晶片整合平台(即粒子處理站)製程所得之質子束引致半絕緣矽基座的等效單一缺陷能階TCAD模型 Ⅱ.克里安照相術之可能物理機制初步研究

Ⅰ.An effective one-trap-level TCAD model for proton-induced semi-insulating substrates rendered by the general SOC integration platform: Particle-Beam Stand (PBS) Ⅱ.A preliminary research on the possible physical mechanism of the Kirlian Photography

指導教授 : 廖重賓
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摘要


Ⅰ.系統單晶片 (system-on-a-chip, SOC) 對半導體產業的重要性已毋庸置疑,但嚴重的矽基底串音 (substrate cross-talk) 問題,會影響電路及整個系統的特性與表現,甚至損毀電路元件。在 2003 年,由 C﹒P﹒Liao 提出一個不干擾設計與超大型積體電路 (VLSI) 製程的後段解決方案 : 粒子處理站 PBS (particle–beam stand),其係利用稱為 π 技術 (PEI = particle–enhanced isolation) 的方法,亦即以高能量質子束轟擊矽基底,能於 VLSI 製程之後、封裝之前,有效達到單晶片上數位電路與類比電路的電性隔絕 (矽基底雜訊串音降低近千倍),而且能提高矽晶圓上射頻積體電路 (RFIC) 上電感之 Q 值達 100% 以上,使得在矽基底上製作單石微波積體電路 (Monolithic Microwave IC, MMIC) 成為可行【1–4】。 然而,PBS 概念至今尚缺乏定量的理論以解釋相關的物理現象,甚至連針對質子束轟擊之最簡單的等效單一缺陷模型都沒有。為了使 PBS 的設計規範 (design rules) 能較容易的進到 VLSI 的前段製程,進一步使 PBS 最終成為舉世半導體產業界的標準製程整合平台,在此於是嘗試開始建構質子束引致之等效單一陷阱能階模型,作為之後更複雜的 TCAD 模擬軟體發展之基礎。 首先,我們發現非晶質矽 (amorphous Si) 相無法在室溫狀態下獲得,而且,以質子束花費高劑量將單晶矽轉變為非晶矽一點也不符合實際。更何況,就阻絕矽基底串音的目的而言,使用半絕緣矽便已足夠。於是,在此試圖以蒙地卡羅法 (Monte-Carlo) 為基礎的 SRIM (the Stopping and Range of Ions in Matter) 電腦模擬程式作為輔助分析工具,藉此模擬質子轟擊的結果 (SRIM 的前身為 TRIM (the Transport of Ions in Matter) 電腦模擬程式)【5】,並以現存的單一缺陷能階公式以及質子轟擊實驗 (含霍爾測量) 結果【2、3】,試圖建構一等效單一缺陷能階模型。 最後,經計算等效單一陷阱能階 (ET),得知在 n 型矽中 ET +0.24 eV,而在 p 型矽中 ET -0.34 eV (以能帶的中央為基準)。 Ⅱ.二十世紀初期俄國的克里安夫婦發現一種新的照相法,用這種技術拍攝的物體,周圍都可見有明顯的光暈,據稱可以清楚的顯示人體散發的能量輪廓,這種照相法通常被稱為克里安照相術(Kirlian Photography)。至今,克里安照相術的物理機制本身與其在生物體診斷學上的有效性依然存有許多爭議、不同的學說,甚至完全的質疑。然而,也有人對其充滿希望,仍認真的對其加以研究,並探討利用它作為診斷病情之另類醫療工具的可能性。本研究係嘗試以一較客觀的態度重新審視克里安照相術之可能物理機制。 本研究利用高電壓、高頻率、低電流的電場施加於被拍攝的物體上,採取相紙跟物體直接接觸的方式,將放電影像感光於相紙,並對產生的影像作分析、探討以便將現存關於克里安照相術之數種機制的說法或理論 (亦即由於水氣、溼氣、空氣分子、導電性…等),與本研究所攝製克里安照相圖形、光譜一一做比對,而逐一剔除不正確的理論。 例如,研究中發現一旦物體具有導電性,其克里安影像之周圍都會有光暈,但是藉由多項實驗的交叉檢驗,證明物體的導電性並不是主宰光暈成形的機制,因而找出生物、非生物之真正影像差別。另外,儘管有人宣稱物體表面的濕氣解離會造成或影響光暈的成形,然而本研究拍攝水的光譜與空氣光譜作比對,發現兩者的光譜竟然相同,因此可知:至少在所採用的克里安照相環境參數 (電壓、頻率) 下,水並未解離,故所得之克里安影像並非水解離所造成。最後發現生物、非生物物體之克里安光暈皆可由“空氣光譜” 完全描述,故在此亦推翻了有人主張的由於體內釋放分子的解離而造成克里安成像的機制。

關鍵字

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並列摘要


Ⅰ.A π technology (PEI = particle-enhanced isolation) had previously been proposed to employ energetic proton beams on the already-manufactured mixed-mode (analog-digital) IC wafers (prior to packaging) for the suppression of undesirable substrate coupling. Results of an improvement of 25-30 dB in noise coupling reduction and a great enhancement of 100-300 % on Q values of on-chip inductors had also been reported. Today, continued evaluations of this π technology have persuaded some chipmakers into realizing a new VLSI back-end facility: the particle-beam stand (PBS), which may ultimately become the general SOC (system-on-a-chip) integration platform. However, up to this day the physics behind such proton-caused defect phase has not been properly addressed. Thus, in this work, an effective 1-level defect model is constructed by fitting the existing single-trap-level theory with experimentally obtained parameters and those from numerical simulations of the SRIM (The Stopping and Range of Ions in Matter) (or previously, TRIM -- the Transport of Ions in Matter) code, a charged-particle stopping-power calculation program. It is realized that, more than being simple traps of charge carriers, these proton-created defects are also intrinsically charged (carrying +e or -e) and thus all are contributing to the Rutherford-like scattering of the then remaining free charge carriers. The calculated effective single trap level (ET) is shown to be about +0.24 eV in n-Si and -0.34 eV in p-Si, measuring from center of the energy band-gap. Ⅱ.In the early days of the 20th century, Russian scientist Kirlian and his wife discovered a new kind of photography, commonly known as the Kirlian Photography. By displaying bright halo or glow around objects taken, it further claimed to be capable of revealing the energy patterns emitted by human bodies for medical and psychological purposes. For Kirlian photography, maybe the most amazing demonstration by far is known as the “phantom-leaf” experiment. Namely, a leaf with portions of it cut off appeared in the photography as a whole leaf intact. Up to this day, however, the mechanism(s) behind Kirlian photography has never been certain. Some claimed that due to the constant release of various types of molecules from human body, the high-voltage, high-frequency electric field used in the Kirlian exposure accelerated and ionized these molecules to generate radiations which in turn contributed to the observed halo. Others argued instead that the Kirlian phenomena were the mere result of interactions between the applied AC electric field and bio-plasma (or bio-energy field) of human body. Other than the above two opposing conjectures, it was noticed that nonliving objects, such as a key or coin, also gave out Kirlian halos, and so far no satisfactory explanation has been given for that. On the application front, however, researches conducted over the last several decades worldwide, unfortunately, have only led to more divided opinions over the role played by the Kirlian photography. Some have allegedly confirmed beyond doubt that Kirlian photography has recorded the bio-energy distribution around human body and provided a very comprehensive image of the functioning of the entire mind-body system. In fact, there are already many applications of it, including: measuring the life-force in seeds and plants, detecting illness before physical symptoms appear, investigating residual toxic effects of drug addiction, assessing psychological compatibility between two people, evaluating the ability of a therapist to activate the self-healing processes in a patient, and for use in conjunction with other therapies such as acupuncture, homoeopathy and spiritual healing, as a cross check to the effectiveness of the methods, to name just a few, even though its physical mechanism was never made clear. On the other side, there are strong opinions claiming that the whole Kirlian phenomena could just be a manifestation of the unstable air or water vapor corona discharge, in addition to the fact that the results are simply not repeatable. Under such circumstances, this thesis work aimed to conduct several preliminary experiments concerning scientific inspection into the frequency aspects of the Kirlian phenomena, disregarding its functions, effectiveness as well as aesthetics.

並列關鍵字

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參考文獻


1.C. P. Liao, D. Tang, H. C. Lu, “Creation of local semi-insulating regions on semiconductor substrates,”US Patent 6,046,109, April 4, 2000.
2.C. P. Liao, M. N. Liu, and K. C. Juang, “Cross-talk suppression in mixed-mode IC’s by the π technology and the future with a SOC integration platform: particle-beam stand (PBS),”IEEE Transactions on Electron Devices, 764, 50 (3), Special Issue on RF and SOC, (2003).
3.C. P. Liao, T. H. Huang, C. Y. Lee, D. Tang, S. M. Lan, T. N. Yang, L. F. Lin, “Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high Q inductors,”19(12), 461-462, IEEE Electron. Dev. Lett., (1998).
4.C. P. Liao, C. W. Liu, and Y. M. Hsu, “Observation of explosive spectral behaviors in proton- enhanced high-Q inductors and their explanations,” IEEE Transactions on Electron Devices, 758, 50 (3), Special Issue on RF and SOC, (2003).
8.F. F. Morehead Jr. and B. L. Crowder, “A model for the formation of amorphous Si by ion bombardment,” Radiation Effects, 6, 27-32 (1970).

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