碳離子佈植於氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測器之製作與研究

Investigated the Performance of AlGaN/GaN Heterojunction Metal-Semiconductor-Metal Photodetectors with Carbon Implanted

詹勳政(Hsun-Cheng Chan)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2006年)

摘要

本研究是製作及探討以碳離子佈植氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測器之特性。分別對有無佈植碳離子光偵測器元件特性進行比較分析，其中包含電流-電壓特性分析、光響應度分析與霍爾量測等。經由特性分析發現，於碳離子佈植之後確實有降低磊晶層的背景濃度，並降低元件暗電流之特性，其暗電流可以將低兩個數量級，但由於元件表面在離子轟擊下造成過多的損壞，以至於元件響應度降低。

並列摘要

According to the epitaxial growth of AlGaN and GaN being a conspicuous defect, result in a enormous carrier concentration. From the energy curve and piezoelectric effect, there will being a localized energy well in the heterojunction of AlGaN/GaN, which will trapping a great carrier concentration inside. Such a phenomenon was so-called two-dimensional electron gas (2DEG), which provides a great mobility and a sheet carrier concentration for a high speed electron device. To achieve the combination of a AlGaN/GaN MSM-PDs and a high speed AlGaN/GaN FETs for a short wavelength optical-electric integrated circuit, it have to reduce the background concentration induced high dark current at first. Consequently, we are exploiting a carbon implanted method to decrease the background concentration of the heterojunction from AlGaN/GaN by the Carbon implanted induce acceptors compensate for the highly donors concentration. After different thermal annealing condition. The extent of defect reconstructing and the concentration changes could be proved by Raman spectrology and Hall measurement. And then we fabricated the MSM-PDs of the annealing sample after carbon implanted and a non-implanted sample, to compare the photo-electronic characteristic of both.

參考文獻

[1] V. V. Kuryatkov and H. Temkin, “Low-noise photodetectors based on heterojunctions of AlGaN–GaN”, Appl. Phys. Lett., vol. 78, pp. 3340-3342, 2001.

[2] P. Pipinys and V. Lapeika “Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling”, J. Appl. Phys., vol. 99, pp. 093706-1-3, 2006.

[3] R. C. Tu, C. J. Tun, S. M. Pan, H. P. Liu, C. E. Tsai, S. J. K, C. C. Chuo, T. C. Wang, G. C. Chi, and I. G. Chen, “Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers”, IEEE Photon. Technol. Lett., vol. 15, pp. 1050- 1052, 2003.

[5] S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”, Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.

[6] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting-Diodes”, Jpn. J. Appl. Phys., Part 2, vol. 34, pp. L1332-L1335, 1995.