利用氣液固相法成長混成矽奈米材料及其光電與材料特性分析

Growth of Hybrid Silicon Nano-materials by Vapor-Liquid-Solid Method and It's Electro-Optical and Material Characteristic Analysis

李彥希(Yen-Hsi Lee)

指導教授 ： 鄭錦隆

國立虎尾科技大學/工程學院/機械與機電工程研究所/碩士(2007年)

https://doi.org/10.6827/NFU.2007.00011

摘要

本論文利用氣液固相 (Vapor-Liquid-Solid) 法成長混成矽奈米材料
(Hybrid Silicon Nanomaterials；HSNMs)，利用濺鍍機沈積Au做為催化劑，
並且使用低壓化學氣相沉積爐管熱處理Au催化劑。藉由調整不同的基板種
類、Au催化劑的厚度、SiH4/ N2氣體流量的比例與成長的時間，得到高品質
的混成矽奈米材料，應用在太陽能電池元件。利用能量散佈光譜儀 (Energy
Dispersive Spectrometry ；EDS)與掃描式電子顯微鏡 (scanning electron
microscopy SEM)來觀察混成矽奈米材料的材料與表面形貌，至於反射率與
結晶特性則分別可以使用UV-VIS與拉曼光譜分析儀來分析。
實驗結果指出混成矽奈米材料的密度與尺寸大小會隨著Au催化劑薄膜
厚度與 SiH4 氣體流量的增強而增強，根據掃描式電子顯微鏡觀察顯示混成
矽奈米材料的直徑約為數百奈米至4微米、長度約為1至70微米。由光譜儀
測得反射率的特性則會隨著混成矽奈米材料的製程時間縮短而增大，而在
poly-silicon crystal/ SiO2/ Si(100) 和石英做為基板上成長的混成矽奈米材
料，其反射率分別為 0.9 和 0.1 %。對於混成矽奈米材料具備極低的反射
率乃歸因於混成矽奈米材料的表面包含一些微晶矽 (uc-Si) 奈米材料。
將混成矽奈米材料製成簡單的p-n與p-i-n結構分析得知，得知混成矽奈
米材料具有良好的對光靈敏度，而多增加一層本質層時，則能增強其崩潰
電壓，亦能增加其電子與電洞對的產生。

關鍵字

太陽能電池 ； 反射率氣液固相法 ； 混成矽奈米材料

並列摘要

In this thesis, the synthesized hybrid silicon nanomaterials (HSNMs) have
been developed by means of the vapor-liquid-solid (VLS) method. The Au
catalyst was prepared by the sputter and pre-treated by the low pressure
chemical vapor deposition (LPCVD). By modulated the various substrates, the
different thickness of the Au catalysts, the various ratios of SiH4/ N2 gas flow,
the various growth times, high-quality HSNMs can be achieved for the solar
cell applications. The compositions and the morphology of the various HSNMs
were analyzed by means of the energy dispersive spectrometry (EDS) and
scanning electron microscopy (SEM). The reflectivity and crystal structures
properties of the HSNMs were performed by the UV-VIS and Raman
spectrometer, respectively.
The results show that the densities and sizes of the HSNMs increase with
increasing the thickness of Au catalyst film and the SiH4 gas flow. Scanning
electron microscopy image displays that the HSNMs with a diameter of several
hundreds nanometer to 4 micrometer and a length of ~1-70 μm were obtained.
The reflectivity characteristics of the HSNMs were decreased with increasing
the process time. The reflectivity properties of the HSNMs on poly-silicon
crystal/SiO2/Si(100) structure and quartz substrate can be achieved around 0.9
and 0.1 %, respectively. The excellent reflectivity of the HSNMs can be
attributed to the microcrystal silicon formed at the HSNMs surface.
The p-n and p-i-n structures with the HSNMs were fabricate. The good
photo-sensitivity was demonstrate for p-n junction with HSNMs. Moreover, the
breakdown voltages were enhanced by the intrinsic Poly-Si films embedded in
the HSNMs layer and P-type substrate.

並列關鍵字

Solar Cell ； Reflectivity ； Vapor-Liquid-Solid (VLS) ； Hybrid

參考文獻

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