在玻璃與塑膠基板上研製二氧化鉿作為氧化鋅薄膜電晶體的閘極介電層與特性分析

Fabrication and Characterization of HfO2 High-K Gate Insulator for Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates

陳宗勳(Zong-Syun Chen)

指導教授 ： 姬梁文 教授

共同指導教授 ： 楊立中 教授(Li-Chung Yang)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2010年)

摘要

本論文中，我們利用二氧化鉿作為氧化鋅薄膜電晶體的閘極介電層，分別製作於玻璃基板與塑膠基板上，其電晶體結構是為底部電極型式，其架構為氧化鋅作為主動層材料而二氧化鉿作為閘極介電層，氧化銦錫作為電極材料，分別利用磁控濺鍍系統依序成長其薄膜，本研究可分為兩大部分，首先，我們控制不同氧化鋅通道之厚度時，觀察其電晶體之特性變化，然後，我們再探討可撓式氧化鋅薄膜電晶體其特性
當氧化鋅通道厚度為100 nm時，其場效移動率為202.6 cm2/V.s，而截止電壓為0.4 V，電流開關比為4.79x106。
當可撓式薄膜電晶體在相同條件下，其場效移動率為168.6 cm2/V.s，而截止電壓為0.5 V，電流開關比為8.4x107。

關鍵字

氧化鋅 ； 二氧化鉿 ； 場效電晶體

並列摘要

In the study, fabricating of HfO2 high-K gate insulator for ZnO thin-film transistors on glass and plastic substrates, we fabricate bottom-gate structure using ZnO film as an active channel layer and HfO2 as gate insulator and ITO as the gate, source, and drain electrode grown by using rf-sputtering. This investigation was divided into two parts, the first one, we control thickness of the different ZnO channel, then observes the transistor of characteristic, The second part is studies of plastic thin-film transistors of characterization.
When ZnO channel thickness of 100 nm, the field effect mobility, threshold voltage, and on-off ratio were measured to be 202.6 cm2/V.s, 0.4 V and 4.79x106, respectively.
Plastic thin-film transistors on the same condition, the field effect mobility, threshold voltage, and on-off ratio were measured to be 168.6 cm2/V.s, 0.5 V and 8.4x107, respectively.

並列關鍵字

ZnO ； HfO2 ； field-effect transistor

參考文獻

[1] M.J.Powell, “The physics of amorphous silicon thin film transistors”, IEEE Transactions on electron devices. Vol.36, No 12, 2753-2763(1989).

[2] Z. Jiwei, Z. Liangying, Y. Xi, Ceram. Int. 26, 883 (2000).

[4] John Robertson, “Electronic structure and band offsets in High K oxides Gate Insulator”, IWGI 2001, p.76-77(2001).

[5] Seongpil Chang, Yong-Won Song, Sanggyu Lee, Sang Yeol Lee and Byeong-Kwon Ju, Appl. Phys. Lett. 92, 192104(2008).

[6] Henry J. H. Chen and Barry B. L. Yeh, Jpn. J. Appl. Phys. 8, 031103 (2009)