- 學位論文
(1-x)TiO2-xCaTiO3陶瓷材料位於X-Band之微波介電特性分析
X-Band Microwave Dielectric Properties Measurements of (1-x)TiO2-xCaTiO3 Ceramic Material
摘要
本論文研究製備(1-x)TiO2-xCaTiO3材料之微波介電特性。主要分為兩部分，第一部分在不同摻雜比例下塊體之微波介電特性；第二部分在不同氧氣比例下製備的薄膜之微波介電特性。 塊體是以固態反應法製備(1-x)TiO2-xCaTiO3(x=0~0.1)陶瓷以供微波頻率量測之應用。在不同的摻雜比例下，固定煆燒溫度為1200℃下，以燒結溫度1300℃及1400℃，並使用微波柱狀共振技術以網路分析儀來量測塊體樣品之微波介電特性。X-ray結果顯示隨著CaTiO3的摻雜量逐漸增加時，其繞射峰強度也逐漸提高。當燒結溫度從1300℃上升到1400℃時，其繞射峰強度並沒有太大的改變。此外，陶瓷體會隨著CaTiO3的摻雜量增加相對密度有逐漸增加之趨勢，並於摻雜x=0.1及燒結1400℃時有最高之相對密度。 薄膜是以反應性射頻磁控濺鍍技術製備(1-x)TiO2-xCaTiO3薄膜。在濺鍍功率、濺鍍壓力、濺鍍時間以及摻雜比例固定下進行基板加熱300℃，探討不同氧氣比例利用共振腔擾動技術量測對薄膜介電特性之影響。由量測結果得知在Ar:O2=50:50(%)時，有最佳之介電特性。
並列摘要
This thesis investigates the microwave dielectric properties of (1-x)TiO2-xCaTiO3 material. There are two main subjects. First is the microwave dielectric properties of the bulk material with at different doping concentrations amount. Second is the microwave dielectric properties of thin films grown in different proportions of oxygen. The (1-x)TiO2-xCaTiO3(x=0~0.1) bulk samples are prepared by solid state reaction method for microwave dielectric properties measurement. Samples with different doping ratio and fixed calcined temperature at 1200℃ are sintered at 1300℃ and 1400℃. The microwave measurement dielectric properties of the bulk samples were measured by the post resonance method useing a network analyzer. X-ray diffration result shows the diffraction peak intensity gradually increased by increasing the amount of CaTiO3 of doping percentage. If the sintered temperature increased from 1300℃ to 1400℃, the diffraction peak intensity has not changed much. By increasing the doping of CaTiO3, sample relative density gradually increased, and the highest relative density happens at x=0.1 at sintering 1400℃ temperature. The (1-x)TiO2-xCaTiO3 thin films were deposited by the RF reactive magnetron sputtering method. The depostition processwascarried out under fixed sputtering power, sputtering pressure, deposition time, and doping amount and the substrate was heated to 300℃. The microwave dielectric properties of thin films deposited at different compositions of oxygen gas were explored by the extended cavity perturbation technique. From the measurement results, the highest dielectric constant was observed on the films obtained under 50% O2 partial pressure.