1.利用黑色素將鐵鏽轉化為磁鐵礦(四氧化三鐵)之防鏽研究
2.利用紫外光生成二氧化矽

(1)有關防鏽、防蝕之既有技術文獻已有許多，目前以黑色素來進行防鏽、防蝕處理則不多見。本技術以黑芝麻為主原料，從中萃取黑色素，再利用黑色素讓鐵鏽(三氧化二鐵)轉變為磁鐵礦(magnetite)以達到防鏽、防蝕的功效。由於建築業對於鋼筋生鏽沒有一個好的解決方法，於是利用此方式可將四氧化三鐵(Fe3O4)吸附在鋼筋上，讓空氣無法穿透以達到防鏽的效果，同時四氧化三鐵也具有抗酸蝕的功效，因此在防蝕方面也具有良好的功效。 (2)在導電基體上製作薄膜傳感器的過程中，必須在基體與電極之間、或元件與元件間沉積絕緣區；也必須在閘極區生成二氧化矽薄膜。這都是因為二氧化矽薄膜具有良好的絕緣性能，並且穩定性好、膜層牢固，長期使用溫度可達1000℃以上，應用十分廣泛。目前最常用的物理氣相沉積方法包含「電子槍蒸鍍」、「離子束濺鍍」、「磁控濺鍍」三種製程方法，皆在高溫環境（約1,000 C）下以Si為起始材料分別製鍍SiO2薄膜，並不一定適合一連串元件製程的整合。因之，本研究利用紫外光使矽基材發生吸收共振，試圖在低溫環境下達到生成二氧化矽層的目的。矽基材本身的自然共振波長約為248nm。然而，鑑於紫外光源及反應環境的考量，吾人係利用先將雙氧水(H2O2)加熱至150℃，再放入矽基材，並照射254nm紫外光的方式進行實驗。我們發現，在此狀態五分鐘後矽基材表面即產生一層SiO2薄膜，經橢圓測厚儀(Ellipsometer)量測得平均厚度為15nm。此方法優點在於低溫下所生成的SiO2不會破壞在其前完成的其他的矽電路。

關鍵字

黑色素；磁鐵礦；四氧化三鐵

並列摘要

(1)Although there are multitudes of literatures pertaining to anti-rust techniques up to this day, essentially none of them is associated with proper use of melanin for stoppage of the rusting process. In this inventive exploration, natural and organic melanin extracted from sesame seeds is applied on iron rust (mainly Fe2O3), and together with heat, to convert the latter to magnetite (Fe3O4) compound. In other words, the newly formed anti-corrosive, rigid magnetite layer provides a protection shield to the iron surface against further corrosion. This research result will bring an impact to the modern building construction sectors on the globe since the rust volume expansion-caused cement fracture has been a common undesirable phenomenon. (This work has been fully sponsored by ARBL at NFU Incubator since the beginning of this thesis program.) (2)Formation of silicon dioxide layers at desired spots on silicon wafers is a crucial step in the microelectronic integrated circuits production. Conventionally, it is achieved by high temperature (at around 1,000 C) means, such as: electron beam evaporation, ion beam sputtering, magnetron sputtering, and what not. Nevertheless, such high temperature approaches impose limitations and even risks for already made circuit components on a wafer. Here, instead, a newly invented method is proposed in which UV light of about 254 nm is employed and applied on silicon wafers in hydrogen peroxide bath heated to about 150 C. As of this time of writing, the obtained thickness of silicon dioxide films is about 15 nm as evidenced by the ellipsometer. (This work has been fully sponsored by ARBL at NFU Incubator since the beginning of this thesis program.)

並列關鍵字

melanin ； magnetite ； Fe3O4

參考文獻

[3] E. D. VERINK, JR.，Simplified Procedure forConstructing Pourbaix Diagrams，Uhlig 's Corrosion Handbook, Second Edition，Pennsylvania State University.

[5]PETER VAN ZANT，90年，半導體製程，美商麥格羅．希爾國際股份有限公司，台灣。

[7]鄭雅憶，98年，矽與鐵矽奈米粒子之製備及特性研究，國立成功大學化學工程研究所碩士論文

[1]陳桂清，2002，”鋼筋混凝土構造物防蝕技術與應用研討會”，港灣 R.C.構造物腐蝕檢測與防蝕原理，頁1-1∼1-27，台中，8月。