開發電鍍銅技術增強射極鈍化背接觸式單晶矽太陽能電池之光電特性研究

本研究探討電鍍銅技術增強射極鈍化背接觸式單晶矽太陽能電池之光電特性，由於網印式太陽能電池背電極使用鋁膠其表面複合速率很高，且膠體中含有玻璃粉導致串聯電阻不佳，為了改善此缺點，因此本研究利用有機金屬高介電薄膜沉積系統(MOCVD)沉積氧化鋁(Al2O3)鈍化層以及電漿輔助化學氣相沉積系統(PECVD)沉積氮化矽鈍化層(Si3N4)，且搭配波長為1064 nm的Nd : YAG雷射，藉由改變雷射參數包括雷射功率、雷射摻雜、雷射焦距、雷射溝槽寬度及雷射圖形等形成不同接觸面積的雷射溝槽，同時探討氫氧化鉀溶液(KOH)移除雷射損傷效應。為了降低太陽能電池的串聯電阻，使用鎳矽合金搭配電鍍鎳/銅技術作為背電極，其改變參數包括鎳晶種層厚度、電鍍銅時間及背面鈍化層效應等，提升射極鈍化背接觸式單晶矽太陽能電池之光電特性。實驗結果顯示，當具有背面鈍化層搭配雷射功率為7 %及雷射焦距為0o且不進行雷射摻雜，並定義雷射焦距雷射圖形Line A為0.5 mm、Line B為1.2 mm、Pitch C為0.8 mm及雷射線條數為5條時，經由1.1%的氫氧化鉀溶液蝕刻1分鐘移除雷射損傷及蒸鍍500 nm鎳晶種層後，再結合退火製程所形成的鎳矽合金具有較好的光電特性。藉由此鎳矽合金的參數條件搭配電鍍銅電流密度30 mA/cm2及電鍍銅時間40分鐘可獲得最佳的實驗結果，其太陽能電池的光電轉換效率為15.8%、開路電壓為627 mV短路電流密度為31.4 mA/cm2及填充因子為0.745。

關鍵字

氧化鋁；氮化矽；雷射摻雜技術；電鍍技術；射極鈍化背接觸式單晶矽太陽能電池

並列摘要

In this study, improved photovoltaic characteristics of passivated emitter and rear contact monocrystalline silicon solar cells (PERC) were demonstrated by electroplated copper technology. In general, high recombination velocity of screen-printed monocrystalline silicon solar cells (SPMSSCs) with aluminum paste as the back electrode was presented. Moreover, the series resistance of the SPMSSCs with aluminum paste was still high due to glass powder in aluminum paste. To improve these disadvantages, combined aluminum oxide (Al2O3) formed by metal-organic chemical-vapour-deposition (MOCVD) and silicon nitride (Si3N4) formed by plasma-enhanced chemical-vapour-deposition (PECVD) as passivation layer of PERC were investigated. Varoius laser grooves with various contact areas were formed by the Nd : YAG laser with a wavelength of 1064 nm. The laser parameters include various powers, the focus, the width, the laser dope, and the patterns. The laser damage and residue were removed by potassium hydroxide (KOH) solution. Simultaneously, the series resistance of the PERC was reduced by the nickel silicide/electroplating copper stacked films. Various parameters, including the thickness of the nickel seed layer, the electroplated time, the back passivation layer effects, were used to enhance the photovoltaic characteristics of the PERC. The results suggest that the conversion efficiencies of the PERC was demonstrated by the laser power of 7 %, the laser focus of 0 degree, the laser width of 5. The laser damage was removed by the potassium hydroxide solution with 1.1% for 1 min. The excellent nickel silicide was demonstrated by the nickel seed layer of thermal evaporated 500 nm and annealed at 400 ℃ for 7 min. A conversion efficiency of 15.8% with a open voltage (Voc) of 627 mV, a short current density (Jsc) of 31.4 mA/cm2, and a fill factor (F.F) of 0.745 were demonstrated by electroplated copper current density of 30 mA/cm2 for 40 minutes.

並列關鍵字

aluminum oxide ； silicon nitride ； laser doped technology ； electroplated technology ； passivated emitter and rear contact silicon solar cells

參考文獻

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開發電鍍銅技術增強射極鈍化背接觸式單晶矽太陽能電池之光電特性研究

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