本研究是藉由COMSOL多重物理量耦合分析軟體來模擬市售TEG-127-2.93-1.6熱電模塊運作方式,並建立一個三維的熱電發電器模型。計算的區域為導體串聯的P型與N型半導體顆粒,及覆蓋於上下端的絕緣導熱陶瓷板。 此研究中使用熱傳方程式與DC直流電源方程式來描述溫度差造成熱量流動遂而流經半導體顆粒後,所產生的Peltier、Thomson與Seebeck三熱電效應與功率性能變化。藉由改變半導體顆粒厚度與顆粒截面積的結構因素,並加入冷熱端最大溫度差為100OC操作參數,探討有無湯姆生效應、半導體顆粒厚度與截面積大小以及幾何形狀對性能之影響,而最主要為改變半導體顆粒結構,並探討銅塊有無對顆粒結構之影響。 其結果顯示,湯姆生效應對發電性能是有影響的,湯姆生愈大發電性能愈好。溫度差愈大情況下,半導體顆粒截面積相同下,顆粒厚度愈薄其發電性能愈好。於同體積之半導體顆粒,其顆粒截面積較小與顆粒厚度較厚以及顆粒對數愈多之模型其發電量愈好,而改變半導顆粒之幾何形狀下其性能卻無顯著提升。最後,改變半導體顆粒結構無銅塊,在相同顆粒總厚度下,遂將顆粒切成為上、下區塊,並將上半部區塊截面積縮減,下半部截面積則維持原截面積,可發現顆粒底部愈厚則有較大功率。
The research stimulated the operational model of TEG-127-2.93-1.6 thermoelectric module by marketed COMSOL Multiphysics and built a three-dimensional thermoelectric generator model. The areas to be calculated were P-typed and N-typed semiconducting particles in series connection, and the insulated heat-conducting ceramic plate that covered on top and bottom. In this research, we used heat-transfer equation and direct-current power supply equation to describe the three thermoelectric effects: Seebeck effect, Peltier effect, Thomson effect and the directional distribution of heat conduction which was produced by the temperature gradient going through semiconductors. By means of changing the structural factors, thickness of the semiconducting particles and the cross-sectional area, and the maximal temperature gradient of the cold side and the hot side as manipulated variable, we aimed to investigate the function effect of the existence of Thomson effect, thickness of the semiconducting particles, the cross-sectional area of particles and geometry. Primary, we changed the structure of semiconducting particles to investigate if the copper billet had effect to structures of particles. In this research, we used heat-transfer equation and direct-current power supply equation to describe the three thermoelectric effects: Seebeck effect, Peltier effect, Thomson effect and the directional distribution of heat conduction which was produced by the temperature gradient going through semiconductors. By means of changing the structural factors, thickness of the semiconducting particles and the cross-sectional area, and the maximal temperature gradient of the cold side and the hot side as manipulated variable, we aimed to investigate the function effect of the existence of Thomson effect, thickness of the semiconducting particles, the cross-sectional area of particles and geometry. Primary, we changed the structure of semiconducting particles to investigate if the copper billet had effect to structures of particles.