類鑽碳膜(Diamond Like Carbon Films)是一種具備高硬度、低摩擦係數、極佳物理及化學穩定性、絕緣性及熱傳導性佳、耐磨耗等特性之薄膜,在工業上有著重要的應用。本實驗利用離子化蒸鍍法(Ion-evaporator)來沉積DLC薄膜,其中電漿源(Plasma source)是以熱燈絲(Filament)與陽極(Anode)及高溫金屬(Refractor)的三極構造的直流電弧放電離子源的離子電鍍(Ion Plating)法,此系統具有離子蒸鍍法及直流電漿CVD法等特徵。 本實驗使用苯氣(C6H6)摻入HMDSO(Hexamethyldisiloxane)氣體,在不同氣體比例下探討其薄膜內矽含量多寡對DLC薄膜的特性影響,使用拉曼光譜儀分析sp2、sp3之含量與變化,以得到一個最佳的氣體比例及熱傳導性良好的類鑽碳薄膜。
DLC (Diamond Like Carbon) films is a kind of film that possesses high hardness, low friction, extremely good physics and chemical stability, insulating and heat-conduction is good, wear-resisting characteristic of dawdling. There is important application on industry. In this study, we used Ion Implantation (Ion-evaporator) to deposit DLC film, Among the Plasma Source used the filament, Anode And the high-temperature metal (Refractor) three electrodes structure direct current the arc discharge ion sources, this method is Ion plating. This system has ion-evaporator and DC-plasma CVD of characteristics. This research uses Benzene (C6H6) mixture HMDSO gas, the characteristic to DLC film of the content of Si atom% influences to probe into the film under different gas proportions, used Raman spectrum to analyze the content of SP2、SP3 and change, in order to get a best gas proportion and heat-conduction of DLC films.