- 學位論文
GZO陶瓷之燒結行為與特性研究
Sintering Behavior and Characteristics of GZO Ceramics
摘要
近年來工業界和學術界皆積極發展替代ITO透明導電膜材料，尤其是應用在液晶顯示器上，其中GZO 已成為一種重要的材料。 本實驗利用將金屬氧化物粉末ZnO與Ga2O3以濕式陶瓷製程製備ZnO：Ga2O3比例為97：3wt%及95：5wt% 之GZO陶瓷，首先將ZnO與Ga2O3粉末混合並加以球磨，以噴霧乾燥造粒機製備造粒粉末，目的為提升粉末流動性，以得到較佳之生胚密度及燒結密度，然後進行1200℃、1300℃、1400℃、1500℃燒結，藉以探討Ga2O3添加比例和燒結溫度不同對試片的燒結密度、顯微組織和電阻率的影響。 依實驗結果發現導電率最佳的是配比3wt% GZO在1500℃燒結，導電率為1.72×10-3Ωcm，密度最佳的是配比3wt% GZO在1400℃燒結後，相對理論密度可達98.9%。在顯微組織方面，相同的燒結溫度下，Ga2O3含量較多其晶粒尺寸會較小。在結晶結構方面，Ga2O3於800℃時會與ZnO反應成ZnGa2O4尖晶石相，最後將本實驗所得GZO陶瓷之燒結密度與電阻率數據與文獻中AZO及GZO陶瓷之數值相比較，其結果是相近似的。
並列摘要
Alternatives for ITO as transparent conductive oxide (TCO) film are extensively developed in the industry and academia recently. Among them, GZO is a potential material for TCO film. In this study, the GZO ceramics with the ratio of 97:3 wt% and 95:5 wt% (ZnO: Ga2O3) were prepared. ZnO and Ga2O3 powder were mixed in distilled water and formulate the slurry for spray drying. Spray drying aims to enhance powder flowability and to get higher green density and sintered density. The green parts of two GZO ceramics were sintered at 1200℃, 1300℃, 1400℃, and 1500℃ to explore the effects of Ga2O3 proportions and sintering temperature on the sintered density, microstructure, and resistivity. The results show that the GZO ceramics with 3wt% Ga2O3 achieved the best resistivity, 1.72×10-3Ωcm, after sintering at 1500℃. Moreover, GZO ceramics with 3wt% Ga2O3 exhibited the highest sintered density, 98.9%, after sintering at 1400℃. Based on microstructural observation, the addition of Ga2O3 content can reduce the grain sizes of GZO ceramics. In the crystal structure, Ga2O3 reacts with ZnO as ZnGa2O4 spinel phase at 800℃. Furthermore, the properties of GZO ceramics investigated in this study were compared with those of AZO and GZO ceramics. The comparison indicated the properties were similar between GZO and AZO ceramics.