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  • 學位論文

LnVO4(Ln = In, La)共摻Pr, Bi之光致發光特性研究

Synthesis and Photoluminescence Properties of Pr and Bi co-doped LnVO4(Ln = In, La) Phosphors

指導教授 : 張益新
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摘要


本研究係以溶膠-凝膠法(sol-gel method)製備螢光粉,第一部分為以InVO4作為螢光粉主體,摻雜不同Pr3+離子濃度,藉由共摻La3+離子取代In3+離子之位置改善其螢光粉體之發光特性。第二部分則以LaVO4作為螢光粉主體,摻雜不同濃度Pr3+離子,共摻Bi3+離子探討其摻雜濃度對晶體結構與發光特性之影響。 第一部分,由XRD結果顯示,在煆燒950℃持溫6小時條件下,可得知結構為斜方晶系InVO4之結晶結構。Pr3+離子摻雜濃度從0.5 mol%增加至10 mol%,當摻雜濃度到達3 mol%並無雜相的產生。之後固定Pr3+離子3 mol%之摻雜量,以La3+離子取代In3+離子之位置,隨著La3+摻雜濃度的增加,螢光粉體之結晶結構由斜方晶系之InVO4結構轉變為單斜晶系之LaVO4結構。從SEM分析得知,(In1-xPrx)VO4螢光粉體的表面型態並不會因為Pr3+離子摻雜濃度的多寡而有太大的改變,但隨著La3+摻雜濃度的增加,螢光粉體之顆粒尺寸有細化的趨勢。在315 nm激發下,其放射光譜並未觀察到Pr3+離子的特性躍遷放射,以326 nm激發下,放射光譜的強度較強,顯示出InVO4:Pr3+螢光粉體其放射主要來自於InVO4主體所產生的放射,其CIE色度座標座落於黃綠光的位置。隨著La3+摻雜濃度的增加,其放射光譜逐漸顯示出Pr3+離子的特性躍遷放射,其放射光譜由Pr3+離子的3P0→3H4,5,6、1D2→3H4和3P0→3F2電子躍遷所構成。其CIE色度座標由黃綠光偏移至近白光之位置。 而在第二部分,由XRD分析結果顯示,在煆燒950℃持溫6小時條件下,可得知結構為單斜晶系LaVO4之結晶結構。隨著Pr3+離子摻雜濃度的增加,並沒有觀察到二次相的產生。SEM分析方面,螢光粉體的表面型態並不會因為Pr3+離子摻雜濃度的多寡而有所改變。在315nm激發下,其放射光譜由Pr3+離子的3P0→3H4,5,6、1D2→3H4和3P0→3F2電子躍遷所構成。在低濃度的Pr3+離子摻雜時,590 ~ 630 nm範圍的1D2→3H4躍遷放射峰強度較強,使得此螢光粉體藉由摻雜不同濃度的Pr3+離子,其CIE色度座標由橙紅色偏移至近白光,再偏移至綠光的位置。在Bi3+離子的共摻下可發現,螢光粉體的發光強度有明顯的提升,可說明Bi3+離子有發揮其增感劑之作用。 關鍵詞: 溶膠-凝膠法、Pr3+離子、增感劑、螢光粉

並列摘要


In this study, the phosphor was prepared by a sol-gel method. The first part InVO4 was selected as the host material, doped with different Pr3+ ions concentrations, In3+ ions replaced by co-doped with La3+ ions to improve phosphors luminescence properties. The second part LaVO4 was selected as the host material, doped with different Pr3+ ions concentrations, co-doped with Bi3+ ions. The crystal structure, surface morphologies, and photoluminescence properties of the La1-x-yPrxBiyVO4 phosphors were then investigated. First, the XRD results shows that the crystal structure of In1-xPrxVO4 phosphor calcined at 950℃ for 6 hr can be attributed to the orthorhombic structure for InVO4. There are no extraneous phases appear when the Pr3+ ions concentrations increase to 3 mol%. When the In3+ ions replaced gradually by the La3+ ions, the crystal structure of the phosphor changes from orthorhombic InVO4 structure to monoclinic LaVO4 structure. The SEM results show that there are no obvious differences for surface morphology of In1-xPrxVO4 phosphors. However, the particles become smaller when the La3+ ion is increased. Under an excitation of 315 nm, there are no electron transition of the Pr3+ ion appear in the emission spectra. But the emission intensity is stronger, shows that In1-xPrxVO4 phosphors emission mainly comes from the host InVO4 by 326 nm exciting, and which has a CIE chromaticity coordinates locating in the yellowish-green region. With La3+ ions concentrations increasing, the emission gradually shows the electron transition of the Pr3+ ion, corresponding to the 3P0→3H4,5,6、1D2→3H4and 3P0→3F2. The CIE chromaticity coordinates shift to the white light region from yellowish-green region. Second, the XRD results shows that the crystal structure of La1-xPrxVO4 phosphor calcined at 950℃ for 6 hr can be attributed to the monoclinic structure for LaVO4. There are no secondary phases exist when the Pr3+ ions concentration increased. The SEM results show that there are no obvious differences for surface morphologies of La1-xPrxVO4 phosphors. By 315 nm exciting, the emission spectra show some emission bands corresponding to the 3P0→3H4,5,6、1D2→3H4and 3P0→3F2 electron transition of the Pr3+ ion. The CIE chromaticity coordinates from orange-red shift to white light region and then shift to green light region. The emission intensities were enhanced for with Bi3+ ion doped La1-xPrxVO4 phosphor, indicating that the Bi3+ ions can act as a sensitizer in the La1-xPrxVO4 phosphor. Keywords: sol-gel method, Pr3+ ion, sensitizer, phosphor

並列關鍵字

sol-gel method Pr3+ ion sensitizer phosphor

參考文獻


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