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  • 學位論文

IGZO陶瓷之燒結行為與特性研究

Sintering Behavior and Characteristics of IGZO Ceramics

指導教授 : 吳明偉
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摘要


近年來由於電子業發展迅速,尤其顯示器的互相競爭更為激烈,基於開發出更高畫質、更快的反應速率及更低耗電的產品,IGZO已成為提高產品效能的重要材料。 本實驗利用金屬氧化物In2O3、Ga2O3、ZnO以濕式製程製備In2O3:Ga2O3:ZnO比例分別為1:1:1(IGZO-111)及1:1:2(IGZO-112)混合並球磨,以噴霧乾燥造粒機製備造粒粉體,目的為提升粉體流動性,為得到較佳之生胚密度及燒結密度,接續以高溫電爐分別在1200℃、1300℃、1400℃、1500℃燒結,探討ZnO添加比例和燒結溫度不同對試片的密度、結晶結構、元素分佈及電阻率的影響。 依實驗結果發現導電率最佳的是IGZO-111在1500℃燒結,電阻率為1.53×10-3Ωcm,密度最佳的是IGZO-111在1300℃燒結,相對理論密度為100%。在顯微結組織方面,相同燒結溫度下IGZO-111晶粒尺寸較IGZO-112大。結晶結構方面,IGZO-111燒結至1200℃開始出現ZnGa2O4尖晶石相,燒結至1500℃則轉變為In2Ga2O7相。IGZO-112燒結溫度至1500℃皆為InGaZnO4相。經EPMA分析IGZO-111燒結後之元素分佈情形,In、Ga、Zn 在1200℃時仍有部分團聚現象。當燒結溫度至1400℃時各元素分佈情形改善為均勻狀況。

並列摘要


Due to the rapid growth of the electronics industry, particularly in the field of the display, the products with good pixels, quicker response speed, and the low electricity consumption are focused. IGZO has become an important material for improved product performances. This study used a wet process to mix and ball mill the In2O3, Ga2O3, and ZnO powders for preparing the IGZO slurry with the ratio of 1:1:1 (IGZO-111) and 1:1:2 (IGZO-112). To improve the flowability of the powders, green density, and sintered density, spray drying was used to produce the spray-dried granules. The green parts were sintered at 1200℃, 1300℃, 1400℃, and 1500℃ in an electric furnace. The objective of this study was to investigate the effects of ZnO content and sintering temperature on the density, crystal structure, elemental distribution, and resistivity. . The results showed that IGZO-111 sintered at 1500℃ achieved lowest resistivity, 1.53×10-3Ωcm. IGZO-111 sintered at 1300℃ can attain 100% dense. The grain sizes of IGZO-111 ceramics were higher than those of IGZO-112. In the crystal structure of IGZO-111, ZnGa2O4 and In2Ga2O7 formed after 1200℃ and 1500℃ sintering, respectively. Moreover, the crystal structure of IGZO-112 was InGaZnO4 after sintering between 1200℃ and 1500℃. EPMA results demonstrate that In, Ga, and Zn were non-uniform after 1200℃ sintering. However, after 1400℃ sintering, the distributions of In, Ga, and Zn were homogeneous.

並列關鍵字

IGZO sintering electrical property microstructure spray drying EPMA

參考文獻


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