於可撓式基板上研製鎵摻雜氧化鋅奈米柱之紫外光檢測器與其元件彎曲特性分析

在本研究中，生長GZO奈米柱使用水熱法生長在可撓塑膠基板上。在奈米柱生長之前，通過RF磁控濺鍍濺鍍一層100nm厚的ZnO晶種層在可撓基板上。研究了Ga摻雜ZnO奈米柱的結構和光電性質。從SEM圖像，純ZnO和Ga摻雜的奈米柱保持纖鋅礦結構。當Ga摻雜到ZnO奈米柱後，平均長度從0.69μm提高到1.35μm，平均直徑從34nm降低到31nm。在光致發光會發現純ZnO及GZO奈米柱都顯示出兩種峰值，包括紫外線（UV）和綠色放射。比較純氧化鋅奈米柱和摻雜Ga的氧化鋅奈米柱光檢測器的光電流與暗電流的比值，以1V為偏壓下量測時，光暗電流比值從77.73增加到456.1，同時在照光下的反應速度與非照光下的穩定性與可逆性。並且製作於可撓式塑膠基板上，並且探討其彎曲後所造成的影響。在彎曲測量中顯示出只有輕微的變化。比較分析顯示，即使在動態彎曲循環之後，UV光電探測器仍具有優異的機械穩定性。在鎵摻雜後，光響應的量測下也有卓越的特性提升。

關鍵字

氧化鋅；鎵摻雜；光檢測器；可撓

並列摘要

In this study, high-density single crystalline Ga doped ZnO (GZO) nanorods were grown on flexible substrate by the hydrothermal method. Prior to nanorods growth, a 100 nm-thick ZnO seed layer was deposited on a flexible substrate by RF magnetron sputtering. The structural and optoelectronic properties of Ga-doped ZnO nanorods are studied. From SEM image, pure ZnO and Ga-doped nanorods keep wurtzite structures. A set of samples have been prepared for different concentration of Ga precursors and named as ZnO and GZO NRs with 0% and 0.2% Ga precursors respectively. When the Ga–doped into ZnO nanorods, the average length is increased from 0.693μm to 1.35 μm and diameter is decreased from 34nm to 31nm. The existence of Ga was examined by energy diffraction spectra (EDS), indicating Ga atom entered into the ZnO lattice. The structural characteristics of the GZO were measured by X-ray diffraction (XRD). It was found that the peaks related to the wurtzite structure ZnO (002), (101), (102), (103), and (112) diffraction peaks, it correspond JCPDS Card No.3601451. The (002) peak indicates that the nanorods were preferentially oriented in the c-axis direction. The optical properties of the GZO were measured by Photoluminescence spectra. It was found that all GZO nanorods arrays showed two different emissions, including UV (ultraviolet) and green emissions. A pure ZnO and Ga-doped ZnO nanorods ultraviolet (UV) photodetector (PD) was also fabricated. Compare the Pure and Ga-doped ZnO nanorods photodetector photo-to-dark current ratio increased from 77.73 to 456.16 biased at 1 V. The response time shows the photocurrent transient (growth-decay) curves of ZnO and GZO samples under a bias voltage of 1 V. The dark current, photocurrent (current under UV illumination, λ= 365 nm) and photo-to-dark current ratio (gain) of the samples have been extracted from the curves. In the bending measurements showing a slight change. The comparative analysis reveals that the UV photodetector has superior mechanical stability by maintaining suitable UV sensing properties even after cycles of dynamic bending.

並列關鍵字

ZnO ； Ga-doped ； Photodetector ； flexible

參考文獻

[1] B. D. Boruah, S. N. Majji, and A. Misra, "Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors," Nanoscale, vol. 9, pp. 4536-4543, Mar 30 2017.

[2] Y.-S. Chiu, C.-Y. Tseng, and C.-T. Lee, "Nanostructured EGFET pH Sensors With Surface-Passivated ZnO Thin-Film and Nanorod Array," IEEE Sensors Journal, vol. 12, pp. 930-934, 2012.

[3] S. Faÿ, L. Feitknecht, R. Schlüchter, U. Kroll, E. Vallat-Sauvain, and A. Shah, "Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells," Solar Energy Materials and Solar Cells, vol. 90, pp. 2960-2967, 2006.

[4] S. M. Hatch, J. Briscoe, and S. Dunn, "A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response," Adv Mater, vol. 25, pp. 867-71, Feb 13 2013.

[5] W. W. Liu, B. Yao, B. H. Li, Y. F. Li, J. Zheng, Z. Z. Zhang, et al., "MgZnO/ZnO p–n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy," Solid State Sciences, vol. 12, pp. 1567-1569, 2010.

國際替代計量

於可撓式基板上研製鎵摻雜氧化鋅奈米柱之紫外光檢測器與其元件彎曲特性分析

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