- 學位論文
以三元Cu2SnSe4和二元ZnS化合物合成五元Cu2ZnSn(SSe)4薄膜之研究
Synthesis of Cu2ZnSn(SSe)4 Thin Films by Using Ternary Cu2SnSe4 and Binary ZnS Compounds
摘要
本實驗是研究銅錫鋅硒硫Cu2ZnSn(SSe)4薄膜在太陽能電池吸收層材料之應用。其製程是利用銅、錫、硒三種元素材料，由熔煉方式製備成三元化合物(CuSnSe)，再加入二元鋅硫化合物(ZnS)形成五元化合物，藉由球磨法(Ball Milling)製備成漿料(Ink)，其四種漿料(Ink)以Cu/Zn+Sn原子百分比為0.6、0.8、1、1.5，並以旋轉塗佈(SpinCoating)於基材上形成Cu2ZnSnSSe4前驅層，再置於爐管內進行(300 oC ~500 oC)快速退火製程(RTP)，其熱處理時間為10min，在通入高純氮氣體下，藉由高溫擴散(Diffusion)，製備出具有鋅黃錫結構(Kesterite)，2-3µm 厚的薄膜。 利用能量散射光譜儀分析薄膜成分、掃描式電子顯微鏡檢視薄膜表面形貌與橫截面、X光繞射分析儀判斷薄膜晶體結構、紫外光可見光分光光譜儀分析薄膜光學性質。實驗結果得知Cu/Zn+Sn原子百分比為0.8，溫度在500°C之CZTSSe薄膜，有較好的結晶性，故有較大的晶粒，其能隙為1.44eV。
並列摘要
The experiment is investigate on the application of Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, copper, tin, selenium the three elements, prepared by melting into the ternary mixture, and adding a binary synthesis (ZnS)compound to mix, the ink is prepared using wet-ball milling , Cu/Zn+Sn atomic ratio were 0.6、0.8、1、1.5，by spin coating. The precursor layer is placed in RTP furnace, and then heated at the temperature between 300 oC to 500oC,respectively, for 10minutes，prepared Cu2ZnSn(SSe)4 2-3μm thick film.In passing a high purity nitrogen gas under high temperature by diffusion。 The compositions of the films were determined by inductively coupled plasma-mass spectrometer(ICP)measurements，Surface and cross-section morphologies were observed by scanning electron microscopy.The crystal structure of the films was analyzed by X-ray diffraction .Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Zn+Sn atomic ratio = 0.8) with Better crystalline were obtained by RTA 500 oC , 10 minutes. It also showed higher crystallinity with larger grain size, and the band gap was 1.44eV.