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  • 學位論文

利用電漿輔助化學氣相沉積系統製備高效率光催化二氧化鈦薄膜

Preparation of High Efficiency PhotoCatalytic-PECVD TiO2 Thin Film

指導教授 : 莊賦祥
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摘要


本研究利用電漿輔助化學氣相系統(Plasma-enhanced chemical vapor deposition, PECVD),使用氬氣(Argon, Ar)作為載氣,輸送加熱後TTIP的蒸氣,再加上以氧氣為射頻電漿激發氣體,製備了二氧化鈦(TiO2)薄膜。並調變PECVD製程的TTIP流量、O2流量、射頻功率及退火溫度等參數。經由量測X光射線繞射儀(XRD)、場發射掃瞄式電子顯微鏡(FE-SEM)分析薄膜特性,並建立薄膜最佳化製程參數,藉由亞甲基藍液(Methylene blue, MB)做為量測降解速率的溶液,並搭配接觸角(Contact Angle, CA)及二氧化鈦薄膜吸附亞甲基藍液的吸收率,進行二氧化鈦薄膜分析。 研究結果顯示,電漿輔助化學氣象沉積系統參數與二氧化鈦薄膜有相當密切的關係,當TTIP 載氣流量為80 sccm,O2流量15 sccm,壓力200 mtorr,RF Power 300W,退火溫度 500℃ 30分鐘,有較佳的銳鈦礦(Anatase)峰值,並以Scherrer equation方程式計算可得知粒徑於18.1nm。將最佳化參數的二氧化鈦薄膜放置於UV LED Chip (395nm 72W) 2.5cm的距離,光強度250mW/cm2照射下,於60分鐘內可降解率可達56%。

並列摘要


In this study, Plasma-enhanced chemical vapor system (PECVD) along with using argon gas (Ar) heated TTIP vapor as the carrier gas transmission, coupled to the oxygen RF plasma excitation gas was used to prepare the thin film of Titanium dioxide (TiO2). TTIP flow rate, O2 flow and RF power of the PECVD process along with annealing temperature was adjusted and optimized. Through the measurement of film characteristics by using X-ray Diffraction (XRD), the analysis by using Field Emission Scanning Electron Microscope (FE-SEM), using UV visible to measure the degradation rate of the Methylene blue(MB) solution, using Contact Angle(CA) to measure titanium dioxide thin film adsorption of methylene blue solution absorption rate, and analyzing titanium dioxide thin film, the process parameters was optimized to establish this film. These results show that plasma enhanced chemical vapor deposition system, the annealing time and titanium dioxide films have intimate relationship. Moreover, when TTIP carrier gas flow of 80 sccm along with O2 flow of 15 sccm, pressure of 200 mtorr, RF power 300W, annealing temperature of 500 ℃ in 30 minutes, the best anatase (Anatase) peak as well as the grain size at 18 to 35nm range can be obtained by using the Scherrer equation. After optimizing the parameters of the titanium dioxide film that placed at distance of 2.5cm to the UV LED Chip (395nm 72W) with the irradiation light intensity of 250mW/cm2, the degradation rate was up to 56% in the 60 minutes.

並列關鍵字

PECVD Anatase-TiO2 Methylene blue Degradaion UV LED

參考文獻


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