以電漿輔助化學氣相沉積系統研製非晶矽及矽鍺薄膜太陽能電池

Amorphous Silicon and Silicon-Germanium Thin Film Solar Cell by Plasma Enhanced Chemical Vapor Deposition

林俊棠(Chun-Tang Lin)

指導教授 ： 莊賦祥

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2012年)

摘要

本論文以電漿輔助化學氣相沉積系統研製非晶矽及矽鍺太陽能電池之元件分析。本論文可分為二個部分，第一部分研究非晶矽薄膜太陽能電池之分析；第二部分研究矽鍺太陽能電池本質層矽鍺薄膜與元件之分析。
非晶矽薄膜太陽能電池研究中，使用超高頻電漿輔助化學氣相沉積系統(VHF-PECVD)以250 ℃研製非晶矽薄膜太陽能電池(ITO / a-SiC (p) / a-Si (i) / a-Si (n) / Al)於玻璃基板上，調變n層和本質層的厚度其太陽能電池轉換效率分別為4.69 %和5.11 %。再製作堆疊式(a-Si / a-Si)太陽能電池調變上層電池的p層厚度其推疊式太陽能電池轉換效率為4.17 %。
非晶矽鍺太陽能電池研究中，使用高頻電漿輔助化學氣相沉積系統(HF-PECVD)以200 ℃研製非晶矽鍺薄膜太陽能電池 (ITO / a-SiC (p) / a-SiGe (i) / a-Si (n) / AZO / Ag)於玻璃基板上，調變本質層不同氫稀釋比例和鍺濃度的矽鍺薄膜對太陽能電池效率之影響。製作的非晶矽鍺薄膜以AFM、FE-SEM、SIMS、FTIR、光暗電導比例值及霍爾效應量測系統等量測分析及非晶矽鍺薄膜太陽能電池以外部量子效率及轉換效率等量測分析。結果顯示調變本質層不同氫稀釋比例和鍺濃度的太陽能電池轉換效率分別為4.37 %和4.45 %。

關鍵字

非晶矽 ； 非晶矽鍺 ； 堆疊型

並列摘要

In this study, application of high-frequency plasma enhanced chemical vapor deposition to characterize a-Si and a-SiGe:H thin film solar cells. The paper consists of two parts: the first part discusses characteristics of the intrinsic layer, n-layer and tandem of amorphous silicon solar cell; the second part discusses characteristics of the intrinsic layer of amorphous silicon germanium film as well as solar cell device.
In this study of the a-Si:H thin film solar cells. The structure a a-Si:H solar cells is (ITO/a-SiC(p)/a-Si(i)/a-Si(n)/AZO/Ag), and the temperature of device were 250 ℃. The a-Si:H thin film solar cells was deposited on the glass, and we analyzed by measuring solar simulator. The optimization conversion efficiency are 4.69 %, 5.11 % and 4.17%, respectively.
In this study of the a-SiGe:H thin film solar cells. The structure a a-SiGe:H solar cells is (ITO/a-SiC(p)/a-SiGe(i)/a-Si(n)/AZO/Ag), and the temperature of device were 200 ℃. The a-SiGe:H thin film solar cells was deposited on the glass, and we analyzed the thin film properties by measuring AFM, FE-SEM, SIMS, FTIR, Photo conductivity (σph) and dark conductivity (σd) and Hall effect. Mainly, processing parameters was adjusted to study and discuss the electrical and optical properties of the intrinsic layer of amorphous silicon germanium film solar cells. By optimizing the Si1-XGeX, adjusting the RH %, a-SiGe thin film characteristics was studied including deposition rate, optical properties, electrical properties. The optimization conversion efficiency is 4.45 %.

並列關鍵字

a-Si:H ； a-SiGe:H ； tandem

參考文獻

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