- 學位論文
以溶膠凝膠法製備ZnO:Al透明導電薄膜
Synthesis of ZnO:Al Transparent Conductive Thin Films Using Sol-Gel Method
摘要
錫摻雜氧化銦（ITO）薄膜利用真空沉積可得具有優良光學和電學性能之透明導電氧化物薄膜，目前已被廣泛使用。由於ITO真空製備過程維護費用昂貴、銦金屬成本高，不易回收，無貴重金屬的氧化鋅濕式製備過程，因此認為適合取代ITO導電膜。本研究利用溶膠凝膠法製備摻雜鋁之ZnO:Al(氧化鋅鋁)透明導電薄膜並探討其性質。文獻中常用的溶劑為乙二醇甲醚(EGME)，但EGME為第二類毒性化學物質，因此本論文分別選用乙二醇單甲醚（EGME）及無毒性之丙二醇甲醚（PGME）作為溶劑，探討不同鋁掺雜濃度及不同熱處理退火溫度對氧化鋅鋁導電薄膜之光學與導電性質影響。利用場發射掃描式電子顯微鏡(FE-SEM) 觀察表面及橫截面微觀結構、X光繞射光譜儀(XRD)分析其主要晶體結構、X光光電子能譜(XPS)分析成分元素鍵結能、四點探針(FPP)測量薄膜電阻率、紫外光可見光光譜儀(UV-VIS)測量薄膜光學透光性。實驗結果顯示以丙二醇甲醚作為溶劑，鋁摻雜1at%含量第一階段氮氣退火溫度600℃一小時再經第二階段5%氫氣+95%氮氣退火溫度500℃一小時，可得到具有C軸取向的ZnO結構、晶體顆粒大小約為30~40 nm、且在可見光區穿透率為80%以上以及較低的電阻率1.9×10-2Ω.cm的氧化鋅鋁(AZO)透明導電薄膜。
並列摘要
Tin-doped indium oxide (ITO) deposited by vacuum process with excellent optical and electrical properties have been generally used as transparent conductive oxide thin films. In view of high cost and recycles not easily of vacuum process, zinc oxide films synthesized by wet chemical process is therefore regarded a more suitable candidate to replace ITO. In this work , sol-gel method was used to synthesis transparent aluminum doped zinc oxide (ZnO : Al, AZO) with 450 nm thickness for large scale production of CIGS solar cell. The experimental parameters contained different solvents, the usually used solvent ethylene glycol monomethyl ether (EGME) and the propylene glycol methyl ether (PGME), the amount of doping Al ranged from 0 to 2 at %, and various annealing temperature. The structure, electrical and optical properties of AZO thin films are investigated by a field emission scanning electron microscope (FE-SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe (FPP) and ultraviolet visible light spectroscope (UV/VIS). The experimental results showed the AZO films were Spiauterite crystalline with C axis preferred orientation and had above 80% transmittance and lower electrical resistivity after annealed twice in N2 atmosphere for one hour. The optimum AZO samples had low electrical resistivity 1.9×10-2 Ω-cm, which were synthesized with PGME solvent, doping 1 at% Al and annealed at 600 ℃ in N2 atmosphere and 500 ℃ in 95 N2/5H2 atomosphere for one hour, separately.
參考文獻
延伸閱讀
- 許智揚（2011）。以溶膠凝膠法製備ZnO：In透明導電薄膜〔碩士論文，國立虎尾科技大學〕。華藝線上圖書館。https://doi.org/10.6827/NFU.2011.00130
- Chu, M. C. (2016). 新穎的溶膠凝膠沈積法與電漿氧化生成技術應用於可撓式透明薄膜電晶體之研究 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-0803201714373701
- 李尚祐（2009）。溶膠凝膠法製備V1-xMxO2薄膜與其電性之研究〔碩士論文，大同大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315103522
- 簡戩（2015）。以溶凝膠法製作摻錫氧化鐵薄膜並研究其 在光電分解水之應用〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0412201512092013
- 王文杰（2011）。Non-toxic sol-gel processes of P- and N-type ZnO transparent conductive thin films〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2011.10848