- 學位論文
添加Na2S對非真空塗佈型Cu(InGa)Se2 薄膜之晶粒成長探討
Na2S Effects on the Grain Growth of the Printed Cu(InGa)Se2 Thin Films
摘要
本實驗利用非真空製程成長 Na2S摻雜之Cu(InGa)Se2的光伏元件之吸收層。實驗過程是先將銅硒、銦硒、鎵硒三種化合物，調整其比例並添加硫化鈉形成CIGS漿料，分別製備出貧銅(Cu-poor)和計量比(Stoichiometric)、富銅(Cu-rich)三種參數，再藉由球磨法製備成漿料，並以塗佈法將漿料塗佈於基板上以形成前驅層，再將前驅層置入紅外線快速升溫爐(RTA)內分別進行(300 oC-500 oC)快速退火製程，持溫10分鐘，使薄膜具有黃銅礦(Chalcopyrite)結構。利用感應耦合電漿質譜分析儀(ICP-MS)和能量散色光譜儀(EDS)來分析成分變化、掃描電子顯微鏡(SEM)觀察表面形貌的變化、X光繞射分析儀(XRD)觀察晶體結構變化、紫外光可見光光譜儀分析光學性質。實驗結果得知，薄膜在退火後具有黃銅礦結構之特徵峰，隨著退火溫度的增加，銅含量比例上升，半高寬變窄，晶粒隨之變大。根據分析，在通入氮氣下，熱處理溫度400 oC、持溫10分鐘時，可得到具有最佳的黃銅礦結構之CIGS薄膜。
並列摘要
This experiment used non-vacuum processes to prepare Na2S doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first,CuSe, In2Se3, Ga2Se3,and Na2S adjusted the ratio of different powders, we can obtain a Cu-poor, Stoichiometric and a Cu-rich type. Inks of the mixtures were made using wet-type ballmilling,and printed onto a substrate to form a precursor film by coating.Then,the samples were treated with in a furnace at 300 to 500 oC, respectively, for 10 minutes, then made to reach with heat treatment to from the chalcopyrite structure. The compositions of the films were determined by inductively coupled plasma composition mass spectrometer (ICP-MS) and energy dispersive spectroscopy (EDS), Changes in surface topography were observed byscanning electron microscopy (SEM), Crystal structure changes were observed by X-ray diffraction (XRD), and the band gaps were obtained by Photoluminescence (PL) measurement. The experimental result shows that CIGS thin film by annealing had a characteristic peak of a chalcopyrite structure, with increasing annealing temperature, the copper content increased, the half height width of the XRD spectra became narrower and the grains becomes larger.Based on the analysis, we can obtain the best chalycopyrite structured of CIGS thin film at 400 oC 10 minutes with nitrogen atmosphere