蝕刻深度對光子晶體面射型中紅外線雷射特性的影響

Effects of the etching depth on the performance of photonic crystal surface emitting mid-infrared lasers

林信杰(Shen-Chieh Lin)

指導教授 ： 李建平 ； 孫建文

國立交通大學/電機學院/電子工程系所/碩士(2018年)

摘要

本論文主要以銻化鎵為基底製作中紅外光子晶體面射型雷射，透過設計五種光子晶體週期，討論隨週期的不同所對應的共振波長移動以及閾值功率與主動層增益的關係。在每個光子晶體週期中設計五組不同蝕刻深度的變化，討論蝕刻深度增加對雷射影響，如波長上的移動、閾值功率變化及模態移動等等的趨勢。接著透過量測能帶結構，確定光子晶體操作的能帶邊緣位置以及雷射發生的模態。
本研究嘗試製作出電激發光子晶體面射型雷射，但發現試片在製程溫度方面受到相當大的限制，以及分子束磊晶機台在參雜濃度有些狀況，導致試片整體的阻值過大，造成元件熱效應的問題過於嚴重。

關鍵字

光子晶體 ； 雷射 ； 中紅外 ； 銻化鎵

並列摘要

This study mainly focused on the fabrication of the photonic-crystal surface-emitting lasers on the gallium antimonide (GaSb) substrates. The optically pumped surface-emitting laser was achieved by fabrication of photonic-crystals with five different periods on the top of the sample surface. The corresponding resonance wavelengths, as well as the dependence on the photonic crystal periods and the threshold power are discussed. Effects of different etching depths on the emission wavelength, threshold power, and mode shifting were investigated for the lasers with the five different photonic-crystal periods. By measuring the energy band structure, we were able to confirm the photonic crystal mode was on the edge of the energy band at the Γ point.
An attempt to electrically pumping the photonic-crystal surface-emitting laser was not successful. The possible causes and future work were also discussed in this thesis.

並列關鍵字

photonic crystal ； laser ； mid-infrared ； GaSb

參考文獻

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