- 學位論文
低於60毫伏特次臨界擺幅之鐵電氧化鉿鋯負電容場效電晶體之探討
Investigation of Sub-60mV/dec-Swing Negative Capacitance Field Effect Transistor with Ferroelectric Zirconium-Doped Hafnium Oxide
參考文獻
Chapter 1
[1] Beyond CMOS, International Roadmap for Devices and Systems, 2017.
[2] J. D. Sau and M. L. Cohen, “Possibility of increased mobility in Ge-Sn alloy system,” Phys. Rev. B, vol. 75, no. 4, pp. 045208, 2007.
[3] K. J. Kuhn, A. Murthy, R. Kotlyar, and M. Kuhn, “Past, present and future: SiGe and CMOS transistor scaling,” ECS Trans., vol. 33, no. 6, pp. 3–17, 2010.
[4] N. Collaert, High Mobility Materials for CMOS Applications, 1st ed. America, Woodhead Publishing, 2018.
延伸閱讀
- 李愷信、陳旻政、林昌賢、魏耘捷（2016）。低於60豪伏特次臨界擺幅之負電容效應鰭式場效電晶體。國家奈米元件實驗室奈米通訊，23(2)，34-37。https://www.airitilibrary.com/Article/Detail?DocID=1029502x-201606-201606130008-201606130008-34-37
- 洪弘晉（2009）。60奈米部分解離絕緣體上N型矽金氧半元件閘極穿隧漏電流行為分析〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2009.02784
- Hsuan, L. C. (2015). 利用高介電常數絕緣層/金屬閘極製程於鰭式場效電晶體調變臨界電壓與填補氧空缺之研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-0312201510270500
- Wang, M. T. (2006). The Electrical Properties of Zirconium Oxide Thin Films for Metal-Oxide-Semiconductor Field Effect Transistor Gate Dielectric Applications [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2006.00016
- 林軒毅（2013）。Electrical Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Enhanced Ultra-Thin-Body MOSFETs by Charged Buried Oxide〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2013.10169