以分子束磊晶成長二維硒化鎵在砷化鎵 (001) 之螺旋差排生長模式和光學特性

SCREW-DISLOCATION-DRIVEN GROWTH MODE AND OPTICAL PROPERTIES OF TWO-DIMENDIONAL GALLIUM SELENIDE ON GALLIUM ARSENIDE (001) BY MOLECULAR BEAM EPITAXY

葉如瓊(NHU QUYNH DIEP)

指導教授 ： 周武清

國立交通大學/理學院/電子物理系所/碩士(2019年)

摘要

本論文透過分子束磊晶技術在砷化鎵（001）基板上生長二維硒化鎵材料。不論晶體對稱性如何，都在不同結構相中發現了螺旋差排的生長機制。這種螺旋錐體結構中大多數在二維硒化鎵ε相中被發現。而拉曼散射以及變溫光激螢光光譜的結果顯示，由於二維硒化鎵奈米薄膜邊界處發生層與層之間的堆疊錯位，導致該結構造成些許的磊晶平面方向的拉伸應變。更進一步以不同波長的雷射激發拉曼光譜得知在砷化鎵(001)面上所成長的二維硒化鎵為常見的ε相，並且透過在初始生長過程當中，使用硒進行表面處理而轉化為β相。這項研究將協助深入理解如何在三維基板上以分子束磊晶成長二維層狀材料，並為實現未來電子和光電異質整合技術以及二次諧波生成之應用開闢新的道路。

關鍵字

硒化鎵 ； 螺桿脫位驅動 ； 分子束磊晶成 ； 拉曼光譜 ； 溫度依賴性光致發光 ； 相變

並列摘要

Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this mechanism, the spiral-pyramidal structure of 2D GaSe layers was typically observed. Investigations on Raman spectroscopy and temperature-dependent photoluminescence indicated that the structure has been suffered an amount of in-plane tensile strain due to the stacking disorders between monolayer at the boundaries of the 2D GaSe nanoflakes as well as the screw-dislocation-driven growth mode. In addition, Raman spectra under various wavelength laser excitations explored the common ε-phase of 2D GaSe materials grown directly on GaAs(001) which can be transformed into the β-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of MBE growth of 2D layered materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.

並列關鍵字

GaSe ； Screw-dislocation-driven ； Molecular beam epitaxy ； Raman spectroscopy ； Temperature-dependent Photoluminescence ； Phase transition

參考文獻

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