鍺奈米天線超穎介面於光偵測元件之應用

Germanium Nanoantenna Metasurfaces as Selective Narrowband Absorbers Photodetectors

周忠興(Zhong-Xing Zhou)

指導教授 ： 陳國平

國立交通大學/光電學院/光電系統研究所/碩士(2019年)

摘要

在可見光與近紅外光波段中，鍺在光偵測的領域中能夠將光信號吸收轉換成為電訊號，並且因為鍺還擁有高折射率的原因，使我們有機會產生電偶極(ED)與磁偶極(MD)。在本論文中，我們研究二維週期性鍺納米天線陣列，操控Mie共振和電偶極晶格共振交互耦合，實現共振晶格Kerker效應並實現窄帶吸收應用於光偵測器。鍺奈米結構陣列比較鍺奈米薄膜有六倍的吸收率增益，我們製作的鍺奈米結構光偵測器其光電流比純鍺薄膜光偵測亦有五倍的增益產生，且這個光電流的探測增強，主要是來自於電偶極與磁偶極的交互共振所造成的強侷域電場所導致。

關鍵字

鍺奈米天線 ； 高吸收元件 ； 米式共振 ； 晶格共振 ； 散射抑制 ； 光偵測

並列摘要

In the optics communication wavelength, germanium is a promising material for detecting optical signals to encode into electrical signals. Not only because of the enough absorptance of material but also its high-refractive-index, it supported us a chance to realize a germanium metasurface photodetector at 1550 nm. Here we study 2D periodic germanium nanoantenna arrays (Ge NA arrays) that support optically induced electric dipole (ED), magnetic dipole (MD) and lattice resonances (LR). By overlapping Mie resonances and ED-lattice resonances, we can realize the resonant lattice Kerker effect and achieve a narrowband absorption to apply in the photodetector. The absorptance of Ge NA arrays increases 6-folds in comparison to unpatterned Ge films. In addition, the photocurrent in such germanium metasurface NAs photodetector enlarges about 5 times comparing with the pure germanium film photodetector due to the strong near fields confinement.

並列關鍵字

germanium nanoantennas ； high absorption device ； Mie resonance ； lattice resonance ； scattering cancellation ； photodetection

參考文獻

[1] B. Jalali and S. J. J. o. l. t. Fathpour, "Silicon photonics," vol. 24, no. 12, pp. 4600-4615, 2006.

[2] D. Thomson et al., "Roadmap on silicon photonics," vol. 18, no. 7, p. 073003, 2016.

[3] R. Won and M. Paniccia, "Integrating silicon photonics," ed: NATURE PUBLISHING GROUP MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND, 2010.

[4] V. R. Almeida, C. A. Barrios, R. R. Panepucci, and M. J. N. Lipson, "All-optical control of light on a silicon chip," vol. 431, no. 7012, p. 1081, 2004.

[5] J. Michel, J. Liu, and L. C. J. N. p. Kimerling, "High-performance Ge-on-Si photodetectors," vol. 4, no. 8, p. 527, 2010.