非晶態氧化銦透明薄膜電晶體技術之研究

Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology

賴郁嘉(Yu-Chia Lai)

指導教授 ： 劉柏村 ； 徐嘉鴻

國立交通大學/電機學院/光電工程系所/碩士(2014年)

https://doi.org/10.6842/NCTU.2014.00965

摘要

無資料

關鍵字

氧化銦 ； 電晶體

並列摘要

無資料

並列關鍵字

indium oxide ； thin film transistor

參考文獻

[1]T. Kamiya, K. Nomura, and H. Hosono, "Present status of amorphous In–Ga–Zn–O thin-film transistors," Science and Technology of Advanced Materials, vol. 11, p. 044305, 2010.

[2]T. Kamiya and H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Materials, vol. 2, pp. 15-22, 2010.

[3]E. N. Cho, K. Jung Han, K. Chang Eun, et al., "Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors," Device and Materials Reliability, IEEE Transactions on, vol. 11, pp. 112-117, 2011.

[4]K. Nomura, H. Ohta, A. Takagi, et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, pp. 488-492, 11/25/print 2004.

[5]H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application," J. Non-Cryst. Solids, vol. 352, pp. 851-858, 2006.