先進互補式金氧半電晶體及快閃式記憶元件中單一電荷效應之統計性研究

Statistical Study of Single Charge Phenomena in Advanced CMOS and Flash Memory

邱榮標(Jung-Piao Chiu)

指導教授 ： 汪大暉

國立交通大學/電機學院/電子工程系所/博士(2013年)

https://doi.org/10.6842/NCTU.2013.00746

摘要

本篇論文主要著重在單電子效應於先進互補式金氧半電晶體(advanced CMOS)及快閃式記憶元件(flash memory)之應用。高介電閘極氧化層(high-k)之可靠性議題，如電壓溫度引致不穩定(BTI)、隨機電報雜訊(RTN)之研究，亦有所探討。更利用蒙地卡羅模擬進一步驗證理論及實驗。

關鍵字

溫壓引致不穩定性 ； 隨機電報訊號 ； 蒙地卡羅模擬 ； 快閃式記憶元件 ； 統計性研究

並列摘要

This thesis will focus on single charge phenomena characterization and its applications to advanced CMOS and non-volatile flash memory. The reliability issues, such as negative bias temperature instability (NBTI) and random telegraph noise (RTN) in advanced gate dielectric (high-k), are studied statistically. Monte Carlo simulations are also performed to corroborate our model and experiment data.

並列關鍵字

NBTI ； RTN ； Monte Carlo simulation ； Flash Memory ； Statistical Study

參考文獻

Chapter 1

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[1.3] S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, “Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET’s,” IEEE Elec. Dev. Lett., vol. 18, pp. 209-211, 1997.

[1.4] J. Wang, and M. Lundstrom, “Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?,” IEDM Tech. Dig., pp. 707-710, 2002.