化學氣相沉積法磊晶成長無機鈣鈦礦CsPbBr3薄膜之研究

Fabrication of Inorganic Cesium Lead Bromide Perovskites Film by Chemical Vapor Deposition Method

洪順閔(Shun-Min Hung)

指導教授 ： 藍宇彬 ； 郭政煌

國立交通大學/光電學院/光電系統研究所/碩士(2020年)

摘要

本研究提出一項有別於過去常用的化學方式備製鈣鈦礦薄膜的製程方法，改善化學溶液前驅物溶解度問題與環境汙染的困局。利用化學氣相沉積法(Chemical Vapor Deposition)成長無機鈣鈦礦材料CsPbBr3薄膜，達成無使用化學溶液的製程。利用化學氣相沉積法，除了解決使用化學溶液的前驅物材料溶解度問題以及減少對環境污染的傷害外，藉由成長溫度、壓力、前驅物比例的調控，可成長出微米等級的薄膜。微米等級膜厚的鈣鈦礦材料薄膜，目前常被運用在X光偵測器中。本研究也是首度成功開發出運用化學氣相沉積法成長鈣鈦礦材料CsPbBr3薄膜。

關鍵字

化學氣相沉積 ； 磊晶 ； 無機鈣鈦礦 ； CsPbBr3薄膜

並列摘要

In this study, we propose a method to grow an inorganic perovskite CsPbBr3 thin film. The perovskite CsPbBr3 film has been deposited on sapphire and Gallium nitride substrate by chemical vapor depostition method. The quality control of the film grows by temperature, pressure, and precursor ratio. The approach improves both issues of solubility of precursors and pollution to the environment, which cause by commonly fabrication of perovskite film using a chemical solution method. Besides, the film grown by chemical vapor deposition can reach the thickness of micron-meter, which is difficult to chemical solution method. Micron-meter-thick perovskite film can use for X-ray detectors. To our knowledge, this is our original proposal for the fim growth of CsPbBr3 by chemical vapor deposition method.

並列關鍵字

Chemical Vapor Deposition ； Cesium Lead Bromide ； Perovskites Film

參考文獻

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