內部參數擾動在金屬閘高介電鰭式場效應電晶體特性影響之3D元件模擬研究

A Unified 3D Device Simulation of Intrinsic Parameter Fluctuation on High-k/Metal Gate Bulk FinFET Device

蘇信文

指導教授 ： 李義明

國立交通大學/電機學院/電機工程系所/碩士(2012年)

https://doi.org/10.6842/NCTU.2012.00943

摘要

近年來，根據國際半導體技術藍圖(ITRS romap)，電晶體尺寸不斷的微縮，已經來到次奈米級世代，各種製程步驟皆更加的繁雜，每個步驟背後需要仰賴更多技術的克服，因此若想要電晶體得以維持摩爾定律(Moore’s Law)繼續微縮，除了傳統製程技術上的突破創新，電晶體結構上的創新，是次奈米級甚至奈米級電晶體勢必要有的革新，而在這些千奇百怪、天馬行空的幾何新結構中，又以鰭式場效應電晶體(FinFET)最符合公司成本上的需求並且有效提升電晶體電特性不只一個世代。另外使得摩爾定律能夠延續的一項非常重要技術金屬閘極與高介電係數閘極絕緣材料，它已經是奈米級電晶體元件開發不可或缺的技術，然而，伴隨著這些結構的創新技術的改良，是否衍生出新的擾動來源，而傳統的擾動來源於新結構中是否得以壓抑等，都是學術界、工業界非常關切的議題。本論文提出有效的模擬方法，探討製程變異，以及隨機參數的擾動於鰭式場效應電晶體的影響，相較於傳統電晶體將獲得多少改進，並且探討將種種擾動來源同時考慮後對於電晶體的影響。
本研究應用蒙地卡羅方法三維度電晶體元件模擬方式進行實驗，在製程變異擾動元件的部分，由於鰭式場效應電晶體為通道三維度之場效應電晶體，將分別
i
探討通道長、寬、高，各分量上的變異對於電晶體造成的影響，發現各分量之變異度與電晶體之臨界電壓有著不同程度上的關係，分析後發現各變異量與臨界電壓幾乎呈現不同斜率的線性比例，而最後探討各分量同時考慮於一電晶體，更有效模擬實際製程情況，提供學術界、工業界，對於奈米級電晶體在製程變異上所造成的擾動有所依據，並且藉由各分量影響臨界電壓的趨勢，給予製程技術上壓抑擾動的一些想法。
而在隨機參數的部分，本研究探討了三種擾動來源分別為隨機缺陷、隨機摻雜、隨機功函數變異。於隨機摻雜的部分，依照高斯分佈產生三維度摻雜分佈於通道內，並對於每個不同摻雜的元件進行分析；而隨機缺陷的部分則是依照類似的模擬方法，隨機產生二維缺陷分給每一個元件，藉此分析缺陷在通道及高介電係數閘極絕緣材料的介面所引起的現象，而對於兩種隨機擾動，本研究皆完整的分析隨機的數量以及位置對於臨界電壓，飽和與截止電流，最大電導，電晶體輸出電阻，汲極導致能障下降等特性擾動。隨機功函數變異的部分，於模擬部分採用局部功函數變異的方法有別於傳統平均功函數的作法，更能有效模擬實際製程，探討金屬晶格大小，位置、數量造成上述的直流特性擾動，並且探討如何於結構上改進壓抑擾動。最後同時考慮隨機缺陷、隨機摻雜、隨機功函數變異於電晶體上的影響，並比較鰭式場效應電晶體與傳統電晶體，各種特性擾動將獲得多少壓抑，於何種幾何比例的結構下可以得到最佳效益的電晶體。
總之，本論文分析了包含閘極長度、寬度、高度缺陷的製程變異，以及隨機參數中的隨機缺陷、隨機摻雜、隨機功函數，完整分析造成電晶體變異的主要擾動源，並進一步探討各擾動源於同一電晶體時的情況，比較傳統電晶體與鰭式場效應電晶體的壓抑效果；此論文結果對於下一世代電晶體特性分析極有助益。

關鍵字

鰭式場效應電晶體 ； 內部參數擾動

並列摘要

For these years, according to ITRS roadmap, the size of device keeps scaling. It comes to nanodevice’s generation, each step of process technology has became more complicated, and they based on more breakthrough of technology. If we want to keep scaling based on Moore’s Law technology, In addition to the breakthroughs and innovations for traditional process technology, the innovation of transistor structure for sub-nano-or even nanoscale transistors is the key-point. In those strange, or abstract geometric new structure, the FinFET transistor outstandingly conform the demands of costs for company, and it effectively improve the characteristics of transistors to next generation even batter. To keep the Moore’s Law be continued, there is a very important technology; high- metal gate technology. And, it has become indispensable technology for the development of nanoscale transistors. No matter the part of academia or industry, we all wonder to know whether the traditional fluctuated source is suppressed by new device structure, and whether there are new fluctuated source accompanied with the innovation of new structure. This paper presents an effective simulation method to investigate the impact of process variation, and random parameter effect for FinFET structure, we would investigate the extent of improvement compared to traditional planar transistor, and we also research that put all the different fluctuated source into one transistor, then investigate the reference between all different fluctuated sources.
In this study, we do the experiment of device simulation with Monte Carlo method for three-dimensional transistor, for the part of device process variation, and due to the FinFET structure is three-dimensional transistor, we would investigate the influences of transistor from the channel length, width and high variation. We found there are different degree of relationships between each component of variability and threshold voltage. After the analysis, the result shows that there are different slopes of the linear proportion between each variation and threshold voltage. Finally, we discuss each component was considered in one transistor, we can simulate more closely to the situation of real process by this way. This study provides the academia and industry a basis that process variation induced fluctuation for nanoscale transistor, and we investigate the trends from the variations induced fluctuation of transistor characteristic, by the trends we provide some idea for suppressing technology.
For the part of random parameter, we discuss three fluctuated sources: random interface traps, random dopants and random workfunction variation. In the part of random dopants, we generate three-dimensional dopants in the channel based on Gaussian distribution, and analyze each device for different distribution of dopants; in the paet of random interface traps, we applied similar simulation method, we randomly generate two-dimensional traps divided into each device, to analyze the phenomenon of traps between channel and insulator of high-k material. And, both these two fluctuated source, we completely examined the effects RDs and Its number and position on device characteristic fluctuations including threshold voltage, on-/off-state current, maximum transconductance, output resistance of transistor, drain induced barrier lowering, gate capacitance. For the part of random workfunction fluctuation, we applied localized workfunction simulation method which is different from the traditional average workfunction simulation method, it could effectively simulate the situation of actual process. We investigate the metal lattice size, location, quantity, resulting in DC characteristics fluctuation, and explore ways to improve structure for suppressing fluctuation. Finally, we simultaneously consider the effects of RDs, Its and WKs, and we compare the characteristic between the planar transistor and FinFET structure, we examined each suppression of fluctuated sources, and try to know most effective transistor is composed in which geometric proportions.
In summary, this paper analyzes the process variation including gate length, width, and height defects; we also examine the random effects including RDs, Its and WKs. We completely analyze all chiefly fluctuated sources inducing transistor variability, and to further explore the situation when each fluctuation considered in one transistor, to compare the suppression between traditional planar transistor and FinFET structure transistor. We believe the results of this study are useful for the characteristic analysis of next generation transistor.

並列關鍵字

3D Device Simulation ； High-k/Metal Gate Bulk FinFET Device ； Intrinsic Parameter Fluctuation

參考文獻

[1] S. M. Sze, and K. K. Ng, Physics of Semiconductor Devices, 3rd ED, WILEYINTERSCIENCE,

[2] F.-L. Yang, J.-R. Hwang, and Y. Li, Electrical Characteristic Fluctuations in Sub-

[3] Y. Li and H.-M. Chou, A comparative Study of Electrical Characteristic on Sub-10

pp. 645-647, September 2005.

[6] L. Chang, S. Tang, K. Tsu-Jae, J. Bokor, and H. Chenming, ”Gate length scaling