三維積體電路之頻率振盪元件封裝特性與應用

Study on Characteristics and Applications of Frequency Resonator Devices with 3D IC Integration

施建宇(Jian-Yu Shih)

指導教授 ： 陳冠能

國立交通大學/電機學院/電子工程系所/博士(2015年)

https://doi.org/10.6842/NCTU.2015.00202

摘要

無資料

關鍵字

三維積體電路技術 ； 矽直銅導孔 ； 晶圓級接合 ； 晶圓薄化技術 ； 石英頻率元件

並列摘要

無資料

並列關鍵字

3D integration ； Cu through-silicon-vias ； Wafer level bonding ； wafer thinning techniques ； quartz resonator device

參考文獻

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[6] M. Lapisa, G. Stemme, and F. Niklaus, “Wafer-level heterogeneous integration for MOEMS, MEMS, NEMS,” IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 3, pp. 629–644, May/Jun. 2011.

[7] L. Pancheri, N. Massari, M. Perenzoni, M. Malfatti, and D. Stoppa, “A QVGA-range image sensor based on buried-channel demodulator pixels in 0.18μm CMOS with extended dynamic range,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, pp. 394-396, 2012.

[8] M. F. Lai, S. W. Li, J. Y. Shih, K. N. Chen, ”Wafer-level hree-dimensional integrated circuits (3D IC): Schemes and key technologies,” Microelectronic Engineering, 2011.