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  • 學位論文

使用次世代基板製作高效率LED之研究

The Highly Efficient InGaN-Based Light Emitting Devices Grown On Next Generation Substrates

指導教授 : 李威儀

摘要


並列摘要


無資料

並列關鍵字

GaN Substrates LED UVLED homoepitaxtial free-standing GaN substrate

參考文獻


[1] K. Lorenz, M. Gonsalves, Wook Kim, V. Narayanan, and S. Mahajan, Appl. Phys.
Lett. 77, 3391 (2000).
[2] Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Daniel D.
Koleske, Mary H. Crawford, Stephen R. Lee, Arthur J. Fischer, Gerald Thaler, and Michael A. Banas, Appl. Phys. Lett. 91, 231114 (2007).
Jahn and K H Ploog, Semicond. Sci. Technol. 21, 1229 (2006).

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