以混合式氧化鑭閘極氧化層改善氮化鎵 高電子遷移率電晶體線性度之研究

Improved Linearity in GaN MIS-HEMTs Using La2O3-based stack Gate Dielectric

施旺成(Wang-Cheng Shih)

指導教授 ： 張翼, ； 馬哲申

國立交通大學/光電學院/光電系統研究所/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00813

摘要

無資料

關鍵字

氮化鎵 ； 高電子遷移率電晶體 ； 線性度

並列摘要

無資料

並列關鍵字

GaN ； MIS-HEMTs ； Linearity

參考文獻

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[5] O. Ambacher, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, W. Schaff, L. Eastman, R. Dimitrov, and L. Wittmer, “Two- dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 85, 3222, 1999.

[6] H. Kim, J. Lee, D. Liu, and W. Lu,“Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing,” Applied Physics Letters, vol. 86, no. 14, 143505, 2005.

[7] Vorgelegt von,M.Sc. Eng.,Ibrahim Khalil,and Barisal, Bangladesch,” Intermodulation Distortion in GaN HEMT,”17.07.2009

[8] Z. H. Liu, Student Member, IEEE, G. I. Ng, Senior Member, IEEE, S. Arulkumaran, Senior Member, IEEE, Y. K. T. Maung, K. L. Teo, S. C. Foo, and V. Sahmuganathan, “Improved Linearity for Low-Noise Applications in 0.25-μm GaN MISHEMTs Using ALD Al2O3 as Gate Dielectric.” IEEE Electron Device Letters, Vol. 31, no. 8, August 2010.