非磁性半導體磁阻元件探討

Investigation of non-magnetic semiconductor magnetoresistance devices

吳帝成(Di-Chen Wu)

指導教授 ： 林聖迪

國立交通大學/電機學院/電子工程系所/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00899

摘要

在此研究領域，四族的矽以及三五族的InGaAs半導體材料，所製作的磁阻元件在常溫時的特性，已經被大量的研究。藉由標準CMOS製程中的HV18完成的幾何型二極矽磁阻元件，在電極間距為6.66 um，磁場為1 T時，有最大的磁阻1.44 %。接著，我們採用具有異常磁阻(EMR)效應的金屬-半導體混合型結構，來製作磁阻元件，在標準CMOS製程下完成的四極磁阻元件，分別有IVVI及IVIV兩種組態來進行量測，在磁阻元件的外觀上，藉由改變電極的排列、半導體與金屬的幾何參數、微縮的特性，來最佳化磁阻數值，雖然在非對稱結構中，IVIV組態量測下，磁場為1 T時，可量測到最高的磁阻特性為150 %，但相對應之敏感度卻不是很高，而且在IVIV組態量測下，EMR效應會引入霍爾效應。最後，我們設計了二極InGaAs磁阻元件，其磁阻及敏感度特性，在磁場為1 T時，不同元件表現上，分別為17.2 %及488.1 ohm/T，是本製程中最高的兩個磁阻元件。此外，我們也使用了COMSOL模擬軟體進行了所有磁阻元件的模擬，並將模擬與量測結果放一起，一併討論與比較。

關鍵字

磁阻 ； 矽 ； 三五族半導體 ； CMOS製程

並列摘要

In this work, the Si- and InGaAs-based magnetoresistance (MR) devices have been extensively investigated at room temperature. For the two-terminal geometrical MR Si devices, the highest MR of 1.44 % at 1 T is obtained with the device of 6.66-um contact distance by using the HV18 CMOS technology. For the MR devices with metal-semiconductor hybrid structure to exhibit so-called extraordinary MR (EMR) effect, four-terminal measurement in IVVI and IVIV configurations are performed with CMOS-made MR devices. In this aspect, the contact arrangement, geometry of semiconductor and metal, and scaling properties are studied to maximize the MR value. Although a very high MR of 150 % at 1 T is achieved with an asymmetrical device in IVIV configuration, the corresponding sensitivity is not good and the included Hall voltage shadows the EMR effect. At last, the two-terminal InGaAs MR device is prepared and a high MR of 17.2 % and good sensitivity of 488.1 ohm/T is demonstrated experimentally. Theoretical simulation is also carried out and the results are discussed and compared with the experimental ones.

並列關鍵字

Magnetoresistance ； Silicon ； III-V semiconductor ； CMOS technology

參考文獻

[ 1 ] S. A. Solin, T. Thio, D. R. Hines, and J. J. Heremans."Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors."Science 289, 1530-1532 (2000)

[ 2 ] J. Sun."Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structures."In Partial Fulfillment of the Requirements For the Degree of Doctor of Philosophy (2013)

[ 8 ] T. Zhou, D. R. Hines, and S. A. Solin."Extraordinary Magnetoresistance in Externally Shunted van der Pauw Plates."Applied Physics Letters 78, 667-669 (2001)

[ 9 ] S. Parker, R. Williams, R. Droopad, R. Stradling, K. Barnham, S. Holmes, J. Laverty, C. Phillips, E. Skuras, R. Thomas."Observation and Control of The Amphoteric Behavior of Si-Doped InSb Grown on GaAs by MBE."Semiconductor science and technology 4, 663-676 (1989)

[ 11 ] M. Hoener, O. Kronenwerth, C. Heyn, D. Grundler, and M. Holz."Geomerty-Enhanced Magnetoresistance of Narrow Au/InAs Hybrid Structures Incorporating a Two-Dimensional Electron System."Journal of Applied Physics 99, 036102 (2006)