This thesis presents a theoretical study of electronic structures of InGaAs/GaAs self-assembled quantum dots by using finite difference method in the single-band effective mass approximation. Throughout this work, truncated-pyramid shaped quantum dots subject to strain and Ga-diffusion are considered in the simulation. For the study, we develop a 3D non-uniform grid finite difference simulator to calculate the effective energy gap, the level energy quantizations and wave functions of single electron and hole confined in 3D-confining quantum dots. We show that the confining potential of quantum dot for electron is substantially softened by strain and Ga-interdiffusion, especially pronounced in small quantum dots. Our simulated results reveal the formation of weakly bound electron states in the small dots with the base length shorter than 12nm and the resulting significant extent of electron wave has been recently confirmed experimentally[1].