發展奈米探針與被動電壓對比技術應用到MOSFET故障分析

DEVELOPMENT OF NANO PROBING AND PASSIVE VOLTAGE CONTRAST TECHNIQUES FOR THE FAILURE ANALYSIS OF MOSFET

林定弘

指導教授 ： 柯富祥

國立交通大學/理學院/理學院碩士在職專班應用科技學程/碩士(2010年)

https://doi.org/10.6842/NCTU.2010.01055

摘要

本文研究奈米探針(Nano probe)與被動電壓對比技術並對MOSFET之故障分析(failure analysis)進行應用，我們開發一種最適流程去進行奈米定位(localization)，並發現某些在奈米級積體電路(IC)中對良率(yield)有影響的微缺陷(defect)。此流程有能力將MOSFET為結構的故障元件適當隔離(isolation)並且正確測定出。根據研究結果我們瞭解製程中之故障機制(failure mechanism)與產生的原因(root cause)。為了將缺陷視覺化，電晶體級的電性量測結果也提供了後續物性故障分析尋找故障區塊之依據。

關鍵字

故障分析 ； 奈米探針量測 ； 被動電壓對比

並列摘要

This study pays more attention to understand the reason of defect deterioration on device performance. The state-of-the-art nano probing and passive voltage contrast techniques are established for the failure analysis of MOSFET. We successfully address some of the subtle defects of which seriously influencing the yield of integrated circuits. The developed technique equipped with the nano probing and electrical capability can effectively isolate and characterize the actual site of failed transistors of the malfunctioned devices. As a result, the proposed identification process can identify the failure mechanisms and the root cause. In addition, the electrical characterization at the transistor level also offers an appropriate solution for the following physical analysis to “visualize” the defects. Our study provides a feasible way for the semiconductor manufacturing to target the unpredictable defect site by means of nano probing and passive voltage contrast techniques in the future.

並列關鍵字

failure analysis ； nano probing ； passive voltage contrast

參考文獻

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