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  • 學位論文

高效能氧化銦鎢薄膜電晶體元件研究與開發

Investigation on High Performance Tungsten Oxide Doped Indium Oxide Semiconductor for Thin Film Transistors Application

指導教授 : 劉柏村

摘要


參考文獻


[ 49] 鄧立峯,「低熱預算後續處理製程於透明氧化物薄膜電晶體技術之應用」,國立交通大學,博士論文,民國102年。
[ 2] S. Wagner, H. Gleskova, I. C. Cheng, and M. Wu, “Silicon for thin-film transistors,” Thin Solid Film, vol. 430, pp. 15-19, Apr. 2003.
[ 3] 陳金鑫,黃孝文,有機電激發光材料與元件,五南圖書出版公司,台北,民國九十四年。
[ 5] P. G. Le Comber, W. E. Spear, and A. Ghaith, “Amorphous silicon field- effect device and possible application,” Electronics Lett., vol. 15, no. 6, pp. 179-181, Mar. 1979.
[ 6] M. Shur, and M. Hack, “Physics of amorphous silicon based alloy field-effect transistors,” J. Appl. Phys., vol. 55, no. 10, pp. 3831-3842, May 1984.

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