We present the results of PL spectra and PLE spectra to analyze the optical properties of InGaAs QDs and multi-facets structure. The number and position of QDs were determined using a scanning electron microscope and the position of QDs can be controlled by the size of the mesa on a GaAs substrate. We present the emission peak of QDs and multi-facets structure by using PL spectra and PLE spectra. From the two dimensional spatial mapping, we were determined the position of the different plane on the multi-facets structure.