半導體量子點之穿隧電流

Tunneling current through a single semiconductor quantum dot

沈家賢(Jia-sian Shen)

指導教授 ： 郭明庭

國立中央大學/資訊電機學院/電機工程學系/碩士(2008年)

摘要

本論文是理論探討流經半導體量子點的穿隧電流，我們使用了兩個能階的安德森模型，來模擬這個系統。穿隧電流分別顯示出庫倫階梯與庫倫振盪的關係，相對於源極-汲極電壓與閘極電壓。穿隧電流頻譜的結構很容易被溫度所抑制。對四重簡併態，穿隧電流不會呈現雙穩態電流的現象。

關鍵字

量子點 ； 格林函數 ； 單電子電晶體

並列摘要

Is this thesis we theoretically study the tunneling current through a semiconductor quantum dot . The Anderson model with two energy levels is used to simulate our studied system . Tunneling current show , respectively , the staircase and oscillatory behaviers with respect to the sourse-drain voltage and the gate voltage . The structure of current spectrum is easily suppressed by temperature . For the four-fold degenerate state , tunneling current did not exhibit bistable current .

並列關鍵字

quantum dots ； single-electron transistors ； Green''s function

參考文獻

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