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  • 學位論文

微結構串接式綠光發光二極體在高溫操作下高速和高功率表現

Linear Cascade GaN Based Microstructure Green Light Emitting

指導教授 : 許晉瑋
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摘要


在本論文中,我們證實串接式綠光發光二極體能應用在塑膠光纖的車內傳輸或惡劣環境中。三顆串接式綠光發光二極體能應用在汽車的特殊電壓12伏,量測變溫範圍從常溫到高溫120℃,其耦合功率隨著溫度升高的變化非常小(約-0.12%℃-1),我們的元件在塑膠光纖中傳輸(NA:0.3)能達到高速(約90MHz)和高耦合功率(0.9mW),即使操作在高電流下(100mA),我們的元件從常溫到高溫120℃也能通過150MHz的眼圖,量測結果指出我們元件的速度和總功率在塑膠光纖中傳輸跟現今商品共振腔紅光發光二極體比較起來對環境溫度的改變比較不敏感。

關鍵字

氮化鎵 發光二極體

並列摘要


In this paper, we demonstrated a linear cascade green light-emitting diode (LED) array for plastic optical fiber (POF) communication in car or in harsh environment. Under the whole range of measured temperature (room temperature (RT) to 120℃), our three-LEDs array driven by the constant voltage bias of in-car battery output (12V) exhibits a very small variation of coupled power vs. temperature (-0.12%℃-1 at RT) and achieves a high-speed (90MHz) and high coupled power (~0.9mW) to POF (NA:0.3). Even under high bias current (100mA) operation, our device can sustain a clear 150MHz eye-opening from RT to 120℃ operation. The static and dynamic measurement results indicate that both the speed and power performance of our device are more insensitive to the variation of ambient temperature as compared to those of red RCLED for POF communication.

並列關鍵字

LED GaN

參考文獻


[1] Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis, “Pendeoepitaxy of gallium nitride thin films,” Appl. Phys. Lett.75,196(1999).
[2] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855(2004).
[3] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys. 93, 9383(2003).
[6] Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu, and Henry P. Lee, “High transparency low resistance oxidized Ni/Au-ZnO contacts to p-GaN for high performance LED applications” phys. stat. sol. (a)201, no.12, 2827-2830(2004).
[7] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrate,” IEEE Photon. Technol. Lett. , vol. 17, no. 2, Feb. 2005

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