一種應用於投影式曝光機的大口徑投影光學系統

林楷傑(Kai-jie Lin)

指導教授 ： 陳奇夆

國立中央大學/工學院/光機電工程研究所/碩士(2014年)

摘要

本論文主要是提供一種設計技術，此技術可應用於投影式曝光機的投影光學系統設
計，此投影光學系統使用之透鏡，口徑約為直徑30cm 左右，曝光光罩為長條形，可針對
大面積光阻基板做掃描式曝光。並且使此投影光學系統可微調曝光倍率，以補償曝光製
程時光阻基板之脹縮。
我們使用三種方法進行初階系統設計，三種方法說明如下，Type1:參考相關專利之
參數設定；Type2:參考期刊論文之像差計算方法，計算像差以得到系統參數；Type3:以
近軸光學理論計算系統參數。
我們比對三種設計方法之模擬結果，發現其有效焦距、像差、微調倍率性能等光學
特性均相當接近，可由此確認我們設計方法的合理性。而在不考慮公差的情況下，以系
統全域光場MTF≧0.6 為標準，設計結果之最小曝光線寬為7

關鍵字

投影式曝光機

並列摘要

This thesis is to provide a design technology that can be applied to the optical system
design for the projection-type exposure machine, in which the shape of exposure mask is a long
strip. It can be used for the scanning exposure of the photo-resist board with a large scan area.
The projection magnification of the exposure mask can be fine-tuned to compensate for the
thermal expansion of the substrate under light exposing.
There are three different ways to be used for the preliminary design, They are described as
the following, Type1: using the parameters from the related patent; Type2: system parameters
being calculated by the aberration formula from journal articles; Type3: system parameters
being calculated by the theory of paraxial optics.
By comparing the simulated results of the three design methods, it is found that the optical
specification such as the effective focal length, aberrations, and the ability of projection
magnification fine-tuning were very close among them. Thus, it justified the applicability of the
design method proposed in this thesis. In the case of not considering manufacturing tolerance,
and with MTF≧0.6 as the standard, the minimum line width of our design was about 7μm. In
addition, the range of projection magnification fine-tuning was up to 0.1%, the distortion
<0.001%, and the uniformity of exposing energy was greater than 90%.
Finally, the tolerance analysis of this design was conducted under the following
preconditions: the yield value being more than 90% (MTF≧0.6), the range of perturbations for
the Monte Carlo analysis being 3 times the standard deviation, and the minimum line width was
10

參考文獻

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[17] Jinyun Zhou *, Liang Lei, Qinghua Lin, and Wenyan Pei,“Optics Optimization of 10μ

m Resolution Used for the Smart Phone’s PCB and ITO Lithography”, International