以奈米異質磊晶術在矽基板上成長的半極性氮化銦鎵量子井

Bottom-up nanoheteroepitaxy of semipolar InGaN quantum on Si substrates

徐瑞偉(Jui-wei Hsu)

指導教授 ： 賴昆佑

國立中央大學/理學院/光電科學與工程學系/碩士(2014年)

摘要

本篇研究提出利用氧化鋅奈米柱結構列陣來克服矽基板與氮化鎵材料的熱膨脹問題與晶格匹配問題，我們藉由成功生長直徑150nm、長400nm具方向性、均勻性一致的氧化鋅奈米異質結構列陣，以致做到氮化鎵生長在矽基板技術，由於氧化鋅與氮化鎵的晶格與熱膨脹係數相當且為奈米柱列陣結構，能有效減少氮化鎵磊晶層應力累積與線差排的發生，且氧化鋅具有可化學蝕刻的特性，對於氮化鎵磊晶層的後續加工處理有很大的幫助，除此之外為了達到增加電子、電動復合的效果，我們利用金屬有機化學氣相沉積法在氮化鎵磊晶層表面成長出半極性奈米角錐結構的氮化銦鎵/氮化鎵多重量子井，藉此可降低量子史塔克效應對發光效率的影響。同時，我們也發現氧化鋅中的鋅原子擴散至氮化鎵內，會讓氮化鎵轉變成P型半導體，可進一步製成P-side down 結構LED提升半極性量子井的IQE，由我們的模擬結果可知藉由P-side down 結構可降低Spillover current ratio到0.1以下，且可大幅提升IQE到0.7 ，增加發光效率。

關鍵字

奈米異質磊晶術 ； 半極性 ； 氮化銦鎵 ； 氮化鎵

並列摘要

this paper proposes the use of ZnO nanorods structure to overcome the mismatch of thermal expansion and the atomic lattice between Si and GaN. We have successfully grown diameter 150nm,and 400nm length of zinc oxide nano-rods array that can achieve GaN on Si , ZnO not only exhibits the lattice constant and thermal expansion coefficient similar to GaN, the oxide alloy can also be easily etched in chemical solutions, which greatly saves the subsequent processing cost. In order to increase internal quantum efficiency (IQE) of the emitter grown on Si, we grew semi-polar nano-pyramidal InGaN/GaN multiple quantum wells with uniquely developed conditions. Further, it is found that the GaN grown on ZnO/Si exhibits p-type behaviors, which is due to the diffusion of Zn into GaN. If confirmed, IQE of the semi-polar quantum wells can be further enhanced through a p-side-down structure, our simulation results show P-side down structure reduces Spillover current ratio of 0.1 or less, and can increase IQE to 0.7 to enhance light efficiency.

並列關鍵字

nanoheteroepitaxy ； GaN

參考文獻

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