The large applied bias and gate voltage of single electron transistors operated at room temperatures lead to the charge transport far away from equilibrium , therefore the tunneling rates of electrons are significantly influenced by the applied bias and gate voltage. Using WKB approximation, we calculate the bias and gate voltage-dependent electron tunneling rates. The left and right tunneling rates of a single quantum dot (QD) are the exponential function of the applied bias and gate voltage. In addition, these tunneling rates also depend on the barrier height, barrier width and QD energy levels. We find that tunneling currents show the quasi- staircase behavior and Coulomb oscillatory current with respect to gate voltage increases with increasing gate voltage. These features get very good agreement with experimental measurements.