自組裝奈米球微影法製備規則有序排列支鐵矽化物奈米點陣列之研究

李明勳(Ming-Shun Lee)

指導教授 ： 鄭紹良

國立中央大學/工學院/化學工程與材料工程學系/碩士(2015年)

摘要

已知金屬矽化物具備高熔點、高熱穩定性及電阻率低等優點，在積體電路製程及電子元件上金屬矽化物已被積極地應用且愈來愈普遍。其中β-FeSi2除了是一種在常溫下具有直接能矽的半導體之外還同時具有諸多優點以及可應用領域，雖然已吸引了許多專家學者投入對其的研究，不過都由於單晶的β-FeSi2製作不易，而無法提供其穩定的優異性質於實際應用端。然而製作出大面積規則有序排列的金屬奈米點來探討其與基材間的相變化或是性質變化將具有更高可信度已成為共識，考慮本實驗室具備製作大面積有序排列金屬奈米點的能力，以及金屬奈米點陣列比起大面積金屬薄膜能與來自更多方向的矽基材進行反應之概念，期待以此不同之反應機制嘗試改善β-FeSi2的結晶性。

本實驗成功地利用自組裝奈米球微影法製備出大面積且規則排列的多晶β-FeSi2奈米顆粒於(001)矽單晶基材上。透過TEM的電子繞射圖中之繞射環鑑定，搭配在192及246.5 cm-1的拉曼散射光譜訊號證實了β-FeSi2的生成。經由實驗結果推論，本研究要能做出β-FeSi2之溫度條件至少要高於800 oC，由於太高溫會生成SiOx奈米線，若在900 oC的退火溫度嘗試改變退火持溫時間搭配製作適當厚度的鐵金屬點陣列，將更有機會生成單晶的β-FeSi2。

關鍵字

鐵矽化物 ； 自組裝 ； 微影術

並列摘要

Known metal silicide with a high melting point, high thermal stability and low resistivity, etc., metal silicide has been actively and increasingly widespread application in the integrated circuit manufacturing process and electronic components. Where β-FeSi2 addition to being capable of having a direct semiconductor silicon at room temperature than at the same time also has many advantages and can be applied in the field, although many experts and scholars have been attracted into their studies, but are due to the single crystal β-FeSi2 production is not easy, but it can not provide a stable excellent properties for practical application side. However, the rules make a big area of metal nano-ordered phase change point to explore its nature and the substrate or between the change will have higher credibility has become a consensus, consider this laboratory has ordered production of large area the ability of metal nano dots, and metal nano dot array can be compared to a large area of the metal film and the silicon substrate to the response of the concept more direction from progresses, we expect this reaction mechanism is different from trying to improve the crystallinity of the β-FeSi2.

The experiment successfully using self-assembled nano-lithography ball Preparation of a polycrystalline β-FeSi2 nano-particles large and regular arrangement of (001) silicon single crystal substrate. Identified by TEM electron diffraction ring in the diffraction pattern, Raman scattering spectra with signals 192 and 246.5 cm-1 confirmed the generation of β-FeSi2. By inference results of this study should be able to make the temperature conditions of at least β-FeSi2 than 800 oC, due to the high temperature into SiOx nanowires, if the annealing temperature at 900 oC try to change the annealing temperature and time with the production of appropriate support ferrous metal dot arrays thickness, will have the opportunity to generate a single crystal of β-FeSi2.

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