In this thesis, to compare the bipolar-junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET) model, we develop nonlinear circuit simulations based on the linear components. The basic linear components include voltage source, resistor, capacitor, and voltage-control current source (VCCS), etc. In the program, we will use explicit representation structure to display the implicit parameters of the nonlinear elements and linear components in the main program. We use the basic linear VCCS with the current and transconductance for Newton-Raphson iteration. The difficulty of MOSFET modeling by linear VCCS will be compared to BJT modeling. We successfully verify the program by the applied circuit of MOSFETs.